BTA08-600BWRG STMicroelectronics, BTA08-600BWRG Datasheet - Page 5

• Manufacturer Part Number: BTA08-600BWRG
• Description: TRIAC 600V 8A TO-220AB
• Manufacturer: STMicroelectronics
• Series: Snubberless™r

Specifications of BTA08-600BWRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 80A, 84A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 8A
• Current, Average Input: 8 A
• Current, Dc Gate-trigger: 50 mA
• Current, On-state, Average, Maximum: 8 A
• Current, On-state, Rms, Maximum: 1 mA A
• Dissipation, Gate-power, Average: 1 W
• Package Type: TO-220AB
• Resistance, Thermal, Junction To Case: 1.6 °C⁄W
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -40 °C
• Thermal Resistance, Junction To Ambient: 60 °C⁄W
• Voltage, Dc Gate-trigger: 1.3 V (Max.)
• Voltage, Repetitive Peak Off State: 600
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2410; 497-2410-5; 497-2410; BTA08-600BW

Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
and corresponding value of I
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Snubberless & Logic level
types)
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
6
5
4
3
2
0
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
1000
100
0
(dI/dt)c [T ] /
10
0.1
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
I
TSM
TW
(A), I t (A s)
dI/dt limitation:
j
25
50A/µs
(dI/dt)c [T s
2
2
1.0
0.10
j
50
(dV/dt)c (V/µs)
pecified]
T (°C)
t (ms)
j
p
2
75
t
10.0
1.00
T835/CW/BW
100
T initial=25°C
p
j
I
T810/SW
< 10 ms
TSM
I t
2
100.0
10.00
125
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values) (Standard types)
Figure 12: DPAK and D
junction to ambient versus copper surface under
tab (printed circuit board FR4, copper thickness:
35 µm)
100
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
90
80
70
60
50
40
30
20
10
0
-40
0.1
I
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0
R
GT H L
th(j-a)
,I ,I [T ] /
B
-20
I
H
D PAK
4
& I
2
(°C/W)
L
C
j
DPAK
I
GT
8
0
I
GT H L
BTA08, BTB08 and T8 Series
,I ,I [T =25°C]
12
1.0
20
(dV/dt)c (V/µs)
16
j
40
T (°C)
S(cm²)
j
2
PAK Thermal resistance
20
60
24
10.0
80
28
100
32
120
36
100.0
5/11
140
40