BTA16-800BWRG STMicroelectronics, BTA16-800BWRG Datasheet - Page 2

• Manufacturer Part Number: BTA16-800BWRG
• Description: IC TRIAC 16A 800V INSUL TO-220AB
• Manufacturer: STMicroelectronics
• Series: Snubberless™r
• Type: TRIACr

Specifications of BTA16-800BWRG

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 160A, 168A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 16A
• Peak Repetitive Off-state Voltage, Vdrm: 800V
• Gate Trigger Current Max (qi), Igt: 50mA
• On State Rms Current It(rms): 16A
• Peak Non Rep Surge Current Itsm 50hz: 160A
• Holding Current Max Ih: 50mA
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 50 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Rohs Compliant: Yes
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 50mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: TO-220AB Insulated
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 168A
• On State Voltage(max): 1.55@22.5AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6668-5; BTA16-800BWRG

Characteristics
1
2/10
Characteristics
Table 2.
Table 3.
1. Minimum IGT is guaranted at 5% of I
2. For both polarities of A2 referenced to A1
Symbol
Symbol
dV/dt
I
(dI/dt)c
P
V
I
T(RMS)
V
GT
I
I
dI/dt
V
V
T
I
G(AV)
H
TSM
DSM
RSM
GM
(2)
I
T
I
GD
stg
GT
²
L
(2)
t
j
(1)
(2)
/
On-state rms current
(full sine wave)
Non repetitive surge peak on-state
current
(full cycle, T
I
Critical rate of rise of on-state current
I
Non repetitive surge peak off-state
voltage
Peak gate current
Average gate power dissipation
Storage temperature range
Maximum operating junction temperature
V
R
V
R
T
I
I
V
gate open
(dV/dt)c = 0.1 V/µs T
(dV/dt)c = 10 V/µs
Without snubber
²
G
T
G
t value for fusing
Test conditions
j
D
L
D
L
D
= 125 °C
= 500 mA
= 2 x I
= 1.2 I
Absolute maximum ratings
Electrical characteristics (T
Snubberless and logic level (3 quadrants)
= 33 Ω
= 3.3 kΩ
= 12 V
= V
= 67 %V
DRM
GT
GT
j
, t
DRM
initial = 25 °C)
r
≤ 100 ns
T
T
T
Quadrant
j
j
j
j
I - II - III
I - II - III
I - II - III
= 125 °C
= 125 °C
= 125 °C
= 125 °C
Doc ID 7471 Rev 9
I - III
GT
II
Parameter
max
Max.
Max.
Max.
Max.
Min.
Min.
Min.
j
= 25 °C, unless otherwise specified)
D
TO-220AB
TO-220AB
insulated
F = 50 Hz
F = 60 Hz
t
F = 120 Hz
t
t
p
p
p
2
= 10 ms
= 10 ms
= 20 µs
PAK /
T1610 T1635
8.5
3.0
10
15
25
30
40
-
500
8.5
35
35
50
60
T
T
t = 20 ms
t = 16.7 ms
T
T
T
T
-
-
c
c
j
j
j
j
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 100 °C
= 86 °C
BTA16, BTB16, T1610, T1635
SW
1.3
0.2
8.5
3.0
10
15
25
30
40
-
BTA16 / BTB16
-40 to + 150
-40 to + 125
CW
500
V
8.5
35
35
50
60
-
-
DRM
Value
+ 100
160
168
144
16
50
4
1
/V
1000
BW
RRM
50
50
70
80
14
-
-
A/ms
A/µs
V/µs
Unit
Unit
A
mA
mA
mA
W
A
A
V
A
V
V
²
s