BTA24-800CWRG STMicroelectronics, BTA24-800CWRG Datasheet - Page 5
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BTA24-800CWRG
Manufacturer Part Number
BTA24-800CWRG
Description
TRIAC 25A 800V INSUL TO220AB
Manufacturer
STMicroelectronics
Series
Snubberless™r
Datasheet
1.BTB24-600BWRG.pdf
(12 pages)
Specifications of BTA24-800CWRG
Triac Type
Alternistor - Snubberless
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
50mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
250A, 260A
Current - On State (it (rms)) (max)
25A
Voltage - Gate Trigger (vgt) (max)
1.3V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
25A
Peak Repetitive Off-state Voltage, Vdrm
800V
Gate Trigger Current Max (qi), Igt
35mA
On State Rms Current It(rms)
25A
Peak Non Rep Surge Current Itsm 50hz
250A
Holding Current Max Ih
50mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4169-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTA24-800CWRG
Manufacturer:
AMD
Quantity:
4 300
Part Number:
BTA24-800CWRG
Manufacturer:
ST
Quantity:
20 000
BTA24, BTB24, BTA25, BTA26, BTB26, T25
Figure 7.
Figure 9.
Figure 11. D
80
70
60
50
40
30
20
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
3000
1000
0
100
0
0.1
R
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
0.01
th(j-a)
I
TSM
B
dI/dt limitation:
4
(°C/W)
(A), I t (A s)
50A/µs
Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
value of I
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
ambient versus copper surface under
tab (printed circuit board FR4, copper
thickness: 35 µm)
8
2
2
PAK thermal resistance junction to
2
12
1.0
0.10
p
(dV/dt)c (V/µs)
< 10 ms and corresponding
16
2
t
S(cm²)
t (ms)
p
20
24
10.0
1.00
28
I t
2
T2535/CW/BW
I
32
TSM
T initial=25°C
j
D PAK
2
36
10.00
100.0
40
Figure 8.
Figure 10. Relative variation of critical rate of
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
(dI/dt)c [T ] /
0
-40
I
GT H L
,I ,I [T ] /
-20
I
H
& I
j
L
25
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
I
decrease of main current versus T
j
GT
(dI/dt)c [T s
0
I
GT H L
,I ,I [T =25°C]
20
j
50
j
pecified]
40
T (°C)
T (°C)
j
j
60
75
80
Characteristics
100
100
120
140
125
5/12
j