T1235T-6I STMicroelectronics, T1235T-6I Datasheet - Page 5

• Manufacturer Part Number: T1235T-6I
• Description: TRIAC 12A 600V 35MA TO-220AB INS
• Manufacturer: STMicroelectronics

Specifications of T1235T-6I

• Triac Type: Alternistor - Snubberless
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 30mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 90A, 95A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220AB
• Current - On State (it (rms) (max): 12A
• Peak Repetitive Off-state Voltage, Vdrm: 600V
• Gate Trigger Current Max (qi), Igt: 35mA
• On State Rms Current It(rms): 12A
• Peak Non Rep Surge Current Itsm 50hz: 90A
• Holding Current Max Ih: 30mA
• Gate: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8908-5

T1210T-6I, T1220T-6I, T1225T-6I, T1235T-6I
Figure 7.
Figure 9.
Figure 11. Relative variation of critical rate of
1000
8
7
6
5
4
3
2
1
0
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
25
100
(dI/dt)
10
-50
-50
0.01
I
I
H
H
I
TSM
, I
, I
pulse with width t < 10 ms and corresponding value of I T
C
L
L
[T
(A), I²t (A²s)
[T
[T
j
j
j
] / (dI/dt)
dI/dt limitation: 50 A/µs
] / I
] / I
-25
-25
H
H
, I
, I
Non repetitive surge peak on state
current for a sinusoidal
Relative variation of holding
current and latching current versus
junction temperature
decrease of main current versus
junction temperature
L
L
50
[T
[T
c
[T
j
j
=25 °C]
=25 °C]
j
p
=125 °C]
0
0
0.10
25
25
typical values
75
50
50
1.00
75
75
I²t
100
2
T
I
j
H
initial=25°C
100
100
I
TSM
t
P
I
T
T
L
(ms)
T
j
j
(°C)
(°C)
j
(°C)
10.00
125
125
125
Figure 8.
Figure 10. Relative variation of critical rate of
Figure 12. Leakage current versus junction
7
6
5
4
3
2
1
0
1.0E+00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0E-01
1.0E-02
1.0E-03
25
dV/dt [T
- 50
I
GT
, V
25
I
GT
DRM
V
j
] / dV/dt [T
GT
[T
Q1-Q2-Q3
/I
-25
j
] / I
RRM
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
decrease of main current versus
(dV/dt)c
temperature for different values of
blocking voltage (typical values)
I
GT
GT
[Tj;V
Q3
, V
50
j
=125 °C]
GT
Logic Level and Snubberless types
I
DRM/
GT
[T
Q1-Q2
0
50
j
=25 °C]
V
RRM
]/I
typical values
DRM
25
/I
RRM
typical values
V
75
DRM
=400 V
[Tj=125°C;7 00V]
75
=V
50
RRM
V
V
V
DRM
=200 V
DRM
DRM
75
=600 V
=600 V
Characteristics
=V
100
=V
=V
100
RRM
RRM
RRM
V
D
=V
100
R
=402 V
T
j
(°C)
T
T
j
j
(°C)
(°C)
125
125
125
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