T1250H-6I STMicroelectronics, T1250H-6I Datasheet - Page 5
![TRIAC 12A 600V HTEMP INS TO220AB](/photos/5/75/57508/t1250h-6i_sml.jpg)
T1250H-6I
Manufacturer Part Number
T1250H-6I
Description
TRIAC 12A 600V HTEMP INS TO220AB
Manufacturer
STMicroelectronics
Series
Snubberless™r
Datasheet
1.T1235H-6G-TR.pdf
(10 pages)
Specifications of T1250H-6I
Triac Type
Alternistor - Snubberless
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
75mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
120A, 126A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1V
Package / Case
TO-220AB
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7632-5
T1250H-6I
T1250H-6I
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
T1235H, T1250H Series
Figure 9.
Figure 11. Leakage current versus junction
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
0.1
50
V
V
DRM
DRM
Relative variation of critical rate of
decrease of main current (dI/dt)c
versus reapplied (dV/dt)c
(typical values)
temperature for different values of
blocking voltage (typical values)
=V
=V
RRM
RRM
75
=200 V
=200 V
1.0
V
V
DRM
DRM
(dV/dt)
=V
=V
RRM
RRM
T
=400 V
=400 V
j
C
(°C)
100
(V/µs)
V
V
DRM
DRM
10.0
=V
=V
RRM
RRM
=600 V
=600 V
125
100.0
150
Figure 10. Relative variation of critical rate of
Figure 12. Variation of thermal resistance
8
7
6
5
4
3
2
1
0
80
70
60
50
40
30
20
10
0
25
0
5
50
decrease of main current versus
junction temperature
junction to ambient versus copper
surface under tab (Epoxy printed
circuit board FR4,
copper thickness = 35 µm)
10
15
75
T
S
j
CU
(°C)
20
(cm²)
100
25
Characteristics
30
125
35
D²PAK
150
40
5/10