BTB12-600BW3G ON Semiconductor, BTB12-600BW3G Datasheet - Page 2
![TRIAC 12A 50MA 600V TO-220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
BTB12-600BW3G
Manufacturer Part Number
BTB12-600BW3G
Description
TRIAC 12A 50MA 600V TO-220AB
Manufacturer
ON Semiconductor
Datasheet
1.BTB12-600BW3G.pdf
(6 pages)
Specifications of BTB12-600BW3G
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
50mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
120A @ 60Hz
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.1V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTB12-600BW3G
BTB12-600BW3GOS
BTB12-600BW3GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTB12-600BW3G
Manufacturer:
ON Semiconductor
Quantity:
40
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On‐State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non-Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On-State Current
Critical Rate of Rise of Off‐State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(V
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
(Gate Open, T
(T
(V
TM
J
D
D
D
= 125°C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = ±100 mA)
= 0.66 x V
= ± 17 A Peak)
DRM
J
DRM
= 125°C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 24 V, I
RRM
D
Junction-to-Case
Junction-to-Ambient
= 12 V, R
G
; Gate Open)
J
= 2 x I
G
= 125°C)
= 60 mA)
Characteristic
Characteristic
L
GT
= 30 W)
, tr ≤ 100 ns)
BTB12-600BW3G, BTB12-800BW3G
D
(T
= 12 V, R
J
= 25°C unless otherwise noted; Electricals apply in both directions)
L
= 30 W)
http://onsemi.com
J
= 125°C)
2
T
T
J
J
= 25°C
= 125°C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
/
c
2000
Min
2.5
2.5
2.5
0.5
0.5
0.5
0.2
0.2
0.2
4.0
-
-
-
-
-
-
-
-
Value
Typ
260
2.3
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.005
Max
1.55
1.0
1.7
1.1
1.1
50
50
50
50
70
90
70
50
-
-
-
-
-
°C/W
A/ms
A/ms
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V