BTB12-800BW3G ON Semiconductor, BTB12-800BW3G Datasheet - Page 4

• Manufacturer Part Number: BTB12-800BW3G
• Description: TRIAC 12A 50MA 800V TO-220AB
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of BTB12-800BW3G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A @ 60Hz
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 50mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.7V
• Package Type: TO-220AB
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 120A
• On State Voltage(max): 1.55@17AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Gate Trigger Voltage (vgt): 1.7 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 50 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTB12-800BW3G; BTB12-800BW3GOS

100
0.1
10
125
1
110
95
80
65
0
0
TYPICAL AT
T
0.5
J
V
= 25°C
Figure 1. Typical RMS Current Derating
T
Figure 3. On‐State Characteristics
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
2
I
T(RMS)
1
, RMS ON‐STATE CURRENT (AMP)
4
1.5
MAXIMUM @ T
2
6
J
BTB12-600BW3G, BTB12-800BW3G
= 25°C
2.5
MAXIMUM @ T
8
120°, 90°, 60°, 30°
3
10
J
= 125°C
3.5
http://onsemi.com
DC
180°
12
4
4
0.01
50
45
40
35
30
25
20
15
10
0.1
5
1
-40 -25 -10 5
0.1
20
18
16
14
12
10
8
6
4
2
0
0
Figure 5. Typical Hold Current Variation
MTI2 Negative
Figure 2. On‐State Power Dissipation
1
T
2
I
J
Figure 4. Thermal Response
T(AV)
, JUNCTION TEMPERATURE (°C)
, AVERAGE ON‐STATE CURRENT (AMP)
MTI2 Positive
20
4
10
t, TIME (ms)
35
50
6
100
65
80
8
120°
180°
1000
95
30°
10
110 125
60°
DC
90°
1 · 10
12
4