BTA2008-800E,412 NXP Semiconductors, BTA2008-800E,412 Datasheet - Page 3
![TRIAC 800V 80MA TO-92](/photos/1/39/13964/to-92_pkg_sml.jpg)
BTA2008-800E,412
Manufacturer Part Number
BTA2008-800E,412
Description
TRIAC 800V 80MA TO-92
Manufacturer
NXP Semiconductors
Datasheet
1.BTA2008-600D412.pdf
(12 pages)
Specifications of BTA2008-800E,412
Package / Case
TO-92-3 (Standard Body), TO-226
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
12mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
9A, 10A
Current - On State (it (rms)) (max)
800mA
Voltage - Gate Trigger (vgt) (max)
2V
Current - On State (it (rms) (max)
800mA
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
9.9 A
On-state Rms Current (it Rms)
0.8 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.3 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
12 mA
Forward Voltage Drop
1.35 V
Mounting Style
Through Hole
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061105412
BTA2008-800E
BTA2008-800E
BTA2008-800E
BTA2008-800E
NXP Semiconductors
BTA2008_SER_D_E_1
Product data sheet
Fig 1.
Fig 2.
P
(W)
I
(A)
TSM
tot
1.0
0.8
0.6
0.4
0.2
0.0
12
8
4
0
1
0
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
= conduction angle
conduction
(degrees)
angle
120
180
30
60
90
0.1
factor
form
1.57
2.8
2.2
1.9
a
4
0.2
0.3
10
Rev. 01 — 18 January 2008
0.4
0.5
BTA2008 series D and E
0.8 A Three-quadrant triacs high commutation
10
0.6
2
0.7
number of cycles
I
T
T
j(init)
0.8
1/f
= 25 C max
© NXP B.V. 2008. All rights reserved.
I
T(RMS)
= 180
003aac118
003aac116
120
90
60
30
I
TSM
(A)
t
10
0.9
3
3 of 12