BTA204W-800C,135 NXP Semiconductors, BTA204W-800C,135 Datasheet - Page 2

• Manufacturer Part Number: BTA204W-800C,135
• Description: TRIAC 800V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BTA204W-800C,135

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 20mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A, 11A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 11 A
• On-state Rms Current (it Rms): 1 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 1.2 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058146135; BTA204W-800C /T3; BTA204W-800C /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
Three quadrant triacs
high commutation
SYMBOL PARAMETER
R
R
j
j
SYMBOL PARAMETER
dV
dI
t
SYMBOL
I
I
I
V
V
I
gt
GT
L
H
D
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
th j-sp
th j-a
T
GT
com
D
/dt
/dt
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
2
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
CONDITIONS
V
exponential waveform; gate open circuit
V
dV
I
dI
TM
DM
DM
G
com
CONDITIONS
V
V
V
I
V
V
T
V
/dt = 5 A/ s
= 12 A; V
T
= 67% V
= 400 V; T
j
D
T2+ G+
T2+ G-
T2- G-
D
T2+ G+
T2+ G-
T2- G-
D
D
D
D
= 2 A
= 125 ˚C
/dt = 20V/ s; gate open circuit
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
DRM(max)
D
DRM(max)
= V
T
GT
GT
T
j
= 125 ˚C; I
T
2
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= 0.1 A;
BTA204W-
DRM(max)
j
; T
= 125 ˚C
j
= 125 ˚C;
; I
G
T(RMS)
= 0.1 A;
BTA204W-
= 1 A;
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
BTA204W series B and C
TYP.
1.2
0.7
0.4
0.1
1000
MIN.
-
-
-
-
-
-
-
...B
6
-
-
-
-
MIN.
...B
50
50
50
30
45
30
30
TYP.
1000
156
...C
70
3
-
-
Product specification
MAX.
1.5
1.5
0.5
-
MAX.
...C
TYP.
35
35
35
20
30
20
20
15
2
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
A/ms
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s