BT137X-600E,127 NXP Semiconductors, BT137X-600E,127 Datasheet

TRIAC 600V 8A SOT186A

BT137X-600E,127

Manufacturer Part Number
BT137X-600E,127
Description
TRIAC 600V 8A SOT186A
Manufacturer
NXP Semiconductors
Datasheet
1.BT137X-600E127.pdf (6 pages)

Specifications of BT137X-600E,127

Package / Case
TO-220-3 Full Pack
Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
20mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
65A, 71A
Current - On State (it (rms)) (max)
8A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
8A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
71 A
On-state Rms Current (it Rms)
8 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.7 V
Gate Trigger Current (igt)
11 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.3 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Off-state Capacitance Co
10 pF
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934039510127
BT137X-600E
BT137X-600E
Philips Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a
full pack, plastic envelope, intended
for
bidirectional switching and phase
control
sensitivity is required in all four
quadrants.
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/ s.
June 2001
Triacs
sensitive gate
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
case isolated
PIN
t
stg
j
DRM
GM
GM
G(AV)
T
1
2
3
/dt
use
main terminal 1
main terminal 2
gate
applications,
in
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
general
where
purpose
high
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
QUICK REFERENCE DATA
SYMBOL
V
I
I
G
T(RMS)
TSM
DRM
/dt = 0.2 A/ s
= 12 A; I
G
case
= 0.2 A;
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
1
1 2 3
hs
j
= 25 ˚C prior to
73 ˚C
T2+ G+
T2+ G-
T2- G-
T2- G+
BT137X-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
-600
600
MAX.
600E
600
BT137X series E
65
1
8
MAX.
Product specification
150
125
0.5
65
71
21
50
50
50
10
8
2
5
5
-800
800
MAX.
800E
800
65
8
Rev 1.400
UNIT
G
A/ s
A/ s
A/ s
A/ s
UNIT
T1
A
˚C
˚C
W
W
V
A
A
A
A
V
2
V
A
A
s

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BT137X-600E,127 Summary of contents

Page 1

... CONDITIONS full sine wave ˚C hs full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT137X series E MAX. MAX. BT137X- 600E 800E 600 800 SYMBOL T2 MIN. MAX. -600 -800 1 - 600 800 - ...

Page 2

... T2 400 0 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 / DRM(max Product specification BT137X series E MIN. TYP. MAX. UNIT - - 2500 MIN. TYP. MAX. UNIT - - 4.5 K 6.5 K K/W MIN. TYP. MAX. UNIT - 3.0 25 ...

Page 3

... Fig.5. Maximum permissible repetitive rms on-state , for current I p 20ms. p 1.6 I TSM 1.4 T time 1.2 0.8 0.6 0.4 100 1000 Product specification BT137X series E IT(RMS BT137X 100 Ths / C versus heatsink temperature T IT(RMS 0.01 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 73˚C. hs ...

Page 4

... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT137X series E max typ 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. j-hs pulse width 100 /dt versus junction temperature T ...

Page 5

... Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 5 Product specification BT137X series E 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.0 (2x) 0.9 0.7 1.3 Rev 1.400 ...

Page 6

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT137X series E Rev 1.400 ...

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