BT139-800E,127 NXP Semiconductors, BT139-800E,127 Datasheet - Page 4

• Manufacturer Part Number: BT139-800E,127
• Description: TRIAC 600V 16A SOT78
• Manufacturer: NXP Semiconductors

Specifications of BT139-800E,127

• Package / Case: TO-220AB-3
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 45mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 155A, 170A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 16A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 170 A
• On-state Rms Current (it Rms): 16 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.7 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.2 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933580060127; BT139-800E; BT139-800E

Philips Semiconductors
9397 750 13437
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
(1) dI
(2) T2 G+ quadrant.
TSM
(A)
(A)
10
10
10
50
40
30
20
10
0
3
2
10
10
t
f = 50 Hz; T
duration; maximum values.
p
T
2
2
/dt limit.
20 ms.
mb
(1)
(2)
10
99 C.
1
10
1
1
surge duration (s)
001aab090
Rev. 03 — 23 September 2004
10
1
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(1) T
(A)
20
15
10
5
0
base temperature; maximum values.
50
mb
= 99 C.
0
10
BT139 series E
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
T
I
T
j(initial)
T (ms)
Triacs; sensitive gate
100
(1)
= 25 C max
T
T
I
001aab092
001aab091
mb
TSM
( C)
t
150
10
2
4 of 12