BTA316B-800E,118 NXP Semiconductors, BTA316B-800E,118 Datasheet - Page 5

• Manufacturer Part Number: BTA316B-800E,118
• Description: TRIAC 800V 16A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BTA316B-800E,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 140A, 150A
• Current - On State (it (rms) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Logic - Sensitive Gate
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 150 A
• On-state Rms Current (it Rms): 16 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.3 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060109118::BTA316B-800E /T3::BTA316B-800E /T3

NXP Semiconductors
5. Thermal characteristics
Table 4.
BTA316B_SER_B_C_E_1
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
10
3
Rev. 01 — 19 April 2007
Conditions
half cycle; see
full cycle; see
mounted on a printed
circuit board; minimum
footprint
BTA316B series B, C and E
10
2
Figure 6
Figure 6
16 A Three-quadrant triacs high commutation
10
1
(1)
(2)
Min
-
-
-
Typ
-
-
55
P
1
t
p
t
p
© NXP B.V. 2007. All rights reserved.
Max
1.7
1.2
-
(s)
003aab776
t
10
Unit
K/W
K/W
K/W
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