BTA412Y-600B,127 NXP Semiconductors, BTA412Y-600B,127 Datasheet - Page 2
![TRIAC 600V 12A TO220AB-3](/photos/5/75/57525/sot78d_to-220__sml.jpg)
BTA412Y-600B,127
Manufacturer Part Number
BTA412Y-600B,127
Description
TRIAC 600V 12A TO220AB-3
Manufacturer
NXP Semiconductors
Datasheet
1.BTA412Y-600B127.pdf
(12 pages)
Specifications of BTA412Y-600B,127
Package / Case
SOT78D (TO-220)
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
60mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
140A, 153A
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
12A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
153 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.5 V @ 18 A
Mounting Style
Through Hole
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934061312127
BTA412Y-600B
BTA412Y-600B
BTA412Y-600B
BTA412Y-600B
NXP Semiconductors
2. Pinning information
Table 1.
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA412Y_SER_B_C_2
Product data sheet
Pin
1
2
3
mb
Type number
BTA412Y-600B
BTA412Y-600C
BTA412Y-800B
BTA412Y-800C
Symbol
V
I
I
I
dI
I
P
T(RMS)
TSM
2
GM
DRM
t
GM
T
/dt
Pinning
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
2
t for fusing
Package
Name
TO-220
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; isolated
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3-lead TO-220
12 A 3-quadrant triacs, insulated, high commutation, high temperature
Rev. 02 — 11 March 2008
Conditions
BTA412Y-600B; BTA412Y-600C
BTA412Y-800B; BTA412Y-800C
full sine wave; T
Figure 4
full sine wave; T
surge; see
t
I
dI
p
TM
G
t = 20 ms
t = 16.7 ms
= 10 ms
/dt = 0.2 A/ s
= 20 A; I
and
Figure 2
G
5
BTA412Y series B and C
= 0.2 A;
Simplified outline
mb
j
= 25 C prior to
SOT78D (TO-220)
and
116 C; see
3
1 2
mb
3
[1]
Min
-
-
-
-
-
-
-
-
-
Graphic symbol
© NXP B.V. 2008. All rights reserved.
T2
sym051
Max
600
800
12
140
153
98
100
4
5
Version
SOT78D
T1
G
Unit
V
V
A
A
A
A
A/ s
A
W
2
s
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