ACST410-8FP STMicroelectronics, ACST410-8FP Datasheet - Page 4

• Manufacturer Part Number: ACST410-8FP
• Description: TRIAC 4A 800V 10MA TO220FPAB
• Manufacturer: STMicroelectronics
• Series: ACS™/A.S.D®r

Specifications of ACST410-8FP

• Triac Type: Logic - Sensitive Gate
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 20mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 30A, 32A
• Current - On State (it (rms)) (max): 4A
• Voltage - Gate Trigger (vgt) (max): 1V
• Package / Case: TO-220-3 Full Pack, Formed Leads
• Current - On State (it (rms) (max): 4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10409-5

Characteristics
4/13
Figure 4.
Figure 6.
Figure 8.
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
35
30
25
20
15
10
5
0
-50
1
0
I T(RMS) (A)
I TSM (A)
I GT , V GT [T j ] / I GT , V GT [T j = 25 °C]
DPAK with copper
surface = 0.5 cm
T
Repetitive
V
C
GT
=102°C
Q1-Q2-Q3
-25
I GT Q3
25
On-state rms current versus
ambient temperature (free air
convection, full cycle)
Relative variation of gate trigger
current (I
versus junction temperature
Surge peak on-state current
versus number of cycles
2
TO-220FPAB
I GT Q1-Q2
0
10
T
Non repetitive
j
initial=25 °C
50
25
GT
T a (°C)
T j (°C)
) and voltage (V
50
75
100
75
Number of cycles
(typical values)
100
t=20ms
One cycle
100
GT
Doc ID 8766 Rev 5
=180°
)
1000
125
125
Figure 5.
Figure 7.
Figure 9.
2.5
2.0
1.5
1.0
0.5
0.0
1000
1.0E+00
1.0E-01
1.0E-02
100
-50
10
1
I H , I L [T j ] / I H , I L [T j = 25 °C]
0.01
1.0E-03
I TSM (A), I²t (A²s)
K = [Z th / R th ]
-25
TO-220FPAB
DPAK
1.0E-02
dl /dt limitation: 100 A / µs
Relative variation of thermal
impedance versus pulse duration
Relative variation of holding
current (I
versus junction temperature
Non repetitive surge peak on-state
current and corresponding value of
I
2
t versus sinusoidal pulse width
0
0.10
1.0E-01
25
H
Z
th(j-c)
) and latching current (I
1.0E+00
50
1.0E+01
1.00
75
I²t
T j initial = 25 °C
I H
1.0E+02
(typical values)
Z
th(j-a)
100
T p (s)
I L
t (ms)
p
I TSM
ASCT4
T j (°C)
1.0E+03
10.00
125
L
)