2N6075BG ON Semiconductor, 2N6075BG Datasheet - Page 3

THYRISTOR TRIAC 4A 600V TO225AA

2N6075BG

Manufacturer Part Number
2N6075BG
Description
THYRISTOR TRIAC 4A 600V TO225AA
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2N6075BG

Triac Type
Logic - Sensitive Gate
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
3mA
Current - Non Rep. Surge 50, 60hz (itsm)
30A @ 60Hz
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
2.5V
Package / Case
TO-225-3
Current - On State (it (rms) (max)
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2N6075BGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N6075BG
Manufacturer:
LITTELFUSE/力特
Quantity:
20 000
3. Pulse Test: Pulse Width
*Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Gate Trigger Current (Continuous DC)
*Peak Repetitive Blocking Current
*Peak On‐State Voltage (Note 3) (I
*Gate Trigger Voltage (Continuous DC), All Quadrants
Gate Non-Trigger Voltage, All Quadrants
*Holding Current
Turn‐On Time (I
Critical Rate of Rise of Commutation Voltage
(Main Terminal Voltage = 12 Vdc, R
-V
0 V
(V
(Main Terminal Voltage = 12 Vdc, R
(Main Terminal Voltage = 12 Vdc, R
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "1 Adc)
@ V
Commutating di/dt = 2.0 A/ms
EE
D
= V
DRM
DRM
, T
J
= V
= 85 C, Gate Open, I
TM
RRM;
= 14 Adc, I
Gate Open)
2.0 ms, Duty Cycle
GT
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn‐on points.
2. Simplified circuitry.
3. Fast turn‐on time for cooler, more efficient and reliable operation.
= 100 mAdc)
TM
Characteristic
L
TM
= "6.0 A Peak)
L
L
= 100 W)
= 100 W, T
= 100 W, T
= 5.7 A, Exponential Waveform,
(T
C
TTL‐SENSITIVE GATE 4 AMPERE TRIAC
= 25 C unless otherwise noted; Electricals apply in both directions)
TRIGGERS IN MODES II AND III
2%.
J
J
= -40 C)
= 110 C)
SAMPLE APPLICATION:
V
2N6071A/B Series
MC7400
EE
14
http://onsemi.com
= 5.0 V
4
7
+
T
T
T
T
J
J
J
J
= 25 C
= 110 C
= -40 C
= 25 C
3
2N6071A
2N6073A
2N6075A
2N6071B
2N6073B
2N6075B
Type
510
W
I
Symbol
GT
dv/dt(c)
+25 C
-40 C
+25 C
-40 C
I
I
V
V
2N6071A
DRM,
V
RRM
t
I
@ T
TM
GD
GT
gt
H
J
Min
mA
0.2
LOAD
20
15
-
-
-
-
-
-
-
5
3
-
I
(Maximum Value)
QUADRANT
Typ
mA
1.4
1.5
20
15
-
-
-
-
-
-
II
5
3
5
Max
mA
2.5
10
30
15
20
15
III
115 VAC
2
2
-
-
5
3
-
60 Hz
Unit
V/ms
mA
mA
mA
mA
ms
10
30
20
IV
V
V
V
5

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