BTA25-600CW3G ON Semiconductor, BTA25-600CW3G Datasheet - Page 2

• Manufacturer Part Number: BTA25-600CW3G
• Description: IC TRIAC 25A 600V ISO TO220-3
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of BTA25-600CW3G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 250A @ 60Hz
• Current - On State (it (rms)) (max): 25A
• Voltage - Gate Trigger (vgt) (max): 1.3V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 25A
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Hold Current: 50mA
• Gate Trigger Current (max): 35mA
• Gate Trigger Voltage (max): 1.3V
• Package Type: TO-220AB
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 250A
• On State Voltage(max): 1.55@35AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On-State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non−Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On−State Current
Critical Rate of Rise of Off-State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(Gate Open, T
(T
(V
TM
D
D
J
D
= 125°C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = ±100 mA)
= 0.66 x V
= ± 35 A Peak)
DRM
J
DRM
= 125°C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 12 V, I
RRM
D
Junction−to−Case (AC)
Junction−to−Ambient
= 12 V, R
G
; Gate Open)
J
= 70 mA, tr ≤ 100 ns)
G
= 125°C)
= 42 mA)
Characteristic
Characteristic
L
= 30 W)
D
(T
= 12 V, R
J
= 25°C unless otherwise noted; Electricals apply in both directions)
L
= 30 W)
http://onsemi.com
J
= 125°C)
2
T
T
J
J
= 25°C
= 125°C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
,
c
0.15
0.15
0.15
Min
500
4.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Value
Typ
260
1.8
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.005
Max
1.55
1.3
1.3
1.3
35
35
35
50
75
75
75
50
3
−
−
−
−
−
°C/W
A/ms
A/ms
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V