MAC212A8 ON Semiconductor, MAC212A8 Datasheet

THYRISTOR TRIAC 12A 600V T0220AB

MAC212A8

Manufacturer Part Number
MAC212A8
Description
THYRISTOR TRIAC 12A 600V T0220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MAC212A8

Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
50mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
50mA
Current - Non Rep. Surge 50, 60hz (itsm)
100A @ 60Hz
Current - On State (it (rms)) (max)
12A
Voltage - Gate Trigger (vgt) (max)
2V
Package / Case
TO-220-3
Current - On State (it (rms) (max)
12A
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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MAC212A8, MAC212A10
Triacs
Silicon Bidirectional Thyristors
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
December, 2005 − Rev. 2
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Off−State Voltage (Note 1)
(T
Gate Open)
On-State RMS Current (T
Full Cycle Sine Wave 50 to 60 Hz
Peak Non−repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T
Preceded and followed by rated current
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Power
(T
Average Gate Power
(T
Peak Gate Current
(T
Operating Junction Temperature Range
Storage Temperature Range
Designed primarily for full-wave ac control applications, such as
Uniformity and Stability
Resistance, High Heat Dissipation and Durability
Blocking Voltage to 800 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Small, Rugged, Thermowatt Construction for Low Thermal
Gate Triggering Guaranteed in Four Modes
Pb−Free Packages are Available*
Semiconductor Components Industries, LLC, 2005
J
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
C
C
C
= −40 to +125 C, Sine Wave 50 to 60 Hz,
DRM
= +85 C, Pulse Width = 10 ms)
= +85 C, t = 8.3 ms)
= +85 C, Pulse Width = 10 ms)
and V
RRM
Rating
for all types can be applied on a continuous basis. Blocking
(T
C
J
= 25 C unless otherwise noted)
= +85 C)
Preferred Device
MAC212A10
C
MAC212A8
= +25 C)
Symbol
I
P
V
T(RMS)
V
I
P
G(AV)
I
T
DRM,
TSM
RRM
I
GM
T
GM
2
stg
J
t
−40 to +125
−40 to +150
Value
0.35
600
800
100
2.0
12
40
20
1
Unit
A
W
W
V
A
A
A
2
C
C
s
MAC212A8D
MAC212A8DG
MAC212A10
MAC212A10G
Preferred devices are recommended choices for future use
and best overall value.
1
2
Device
3
1
2
3
4
MT2
ORDERING INFORMATION
600 thru 800 VOLTS
12 AMPERES RMS
x
A
Y
WW
G
http://onsemi.com
PIN ASSIGNMENT
CASE 221A−07
= 8 or 10
= Assembly Location
= Year
= Work Week
= Pb−Free Package
TO−220AB
TO−220AB
TO−220AB
TO−220AB
TO−220AB
STYLE 4
(Pb−Free)
(Pb−Free)
TRIACS
Package
Publication Order Number:
Main Terminal 1
Main Terminal 2
Main Terminal 2
Gate
G
MAC212AxG
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
MARKING
DIAGRAM
MAC212A8/D
MT1
AYWW
Shipping

Related parts for MAC212A8

MAC212A8 Summary of contents

Page 1

... MAC212A8, MAC212A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering ...

Page 2

... Critical Rate of Rise of Commutation Voltage (V = Rated Commutating di/dt = 6.1 A/ms, D DRM TM Gate Unenergized + Critical Rate of Rise of Off-State Voltage (V = Rated V , Exponential Voltage Rise, Gate Open DRM MAC212A8, MAC212A10 ( unless otherwise noted; Electricals apply in both directions) C Symbol +125 +125 C) J dv/ http://onsemi.com ...

Page 3

... Quadrant II (−) I GATE I − GT Quadrant III (−) I GATE All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. MAC212A8, MAC212A10 (Bidirectional Device) on state RRM RRM Quadrant 3 MainTerminal 2 − Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) ...

Page 4

... T(RMS) Figure 1. Current Derating 100 5 2 125 C J 1.0 0.5 0.2 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4 INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) T Figure 3. Maximum On−State Voltage Characteristics MAC212A8, MAC212A10 CONDUCTION ANGLE 180 8 2.0 100 80 60 CYCLE ...

Page 5

... T , CASE TEMPERATURE ( C) C Figure 6. Typical Gate Trigger Current 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 MAC212A8, MAC212A10 2.8 2.4 2.0 1.6 1.2 0.8 0 −60 −40 Figure 7. Typical Holding Current 5 100 t, TIME (ms) Figure 8. Thermal Response http://onsemi ...

Page 6

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MAC212A8, MAC212A10 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA ...

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