MV209 ON Semiconductor, MV209 Datasheet - Page 2

• Manufacturer Part Number: MV209
• Description: DIODE TUNING EPICAP 30V TO92-2
• Manufacturer: ON Semiconductor

Specifications of MV209

• Capacitance @ Vr, F: 32pF @ 3V, 1MHz
• Capacitance Ratio: 6.5
• Capacitance Ratio Condition: C3/C25
• Voltage - Peak Reverse (max): 30V
• Diode Type: Single
• Q @ Vr, F: 200 @ 3V, 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-2, TO-226AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MV209OS

1. C
MMBV109LT1
MMBV109LT1G
MMBV109LT3
MMBV109LT3G
MV209
MV209G
0.006
0.002
0.001
0.06
0.02
0.01
100
6.0
2.0
1.0
0.6
0.2
0.1
60
20
10
R
40
36
32
28
24
20
16
12
8
4
0
−60
is the ratio of C
Device
1
−40
Figure 1. DIODE CAPACITANCE
−20
Figure 3. LEAKAGE CURRENT
3
t
V
measured at 3 Vdc divided by C
R
V
T
, REVERSE VOLTAGE (VOLTS)
0
A
R
(Pb−Free)
(Pb−Free)
(Pb−Free)
, AMBIENT TEMPERATURE
Package
SOT−23
SOT−23
SOT−23
SOT−23
= 20 Vdc
TO−92
TO−92
+20
+40
10
10,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
+60
1,000 Units / Bag
1,000 Units / Bag
Shipping
NOTES ON TESTING AND SPECIFICATIONS
+80
30
+100
f = 1.0 MHz
T
MMBV109LT1, MV209
A
= 25°C
†
t
measured at 25 Vdc.
+120 +140
http://onsemi.com
V
100
C
Min
R
26
t
= 3.0 Vdc, f = 1.0 MHz
, Diode Capacitance
2
1000
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
Nom
100
pF
29
10
−75
10
V
C
Max
−50
f = 1.0 MHz
R
t
32
[ C
= 3.0 Vdc
Figure 4. DIODE CAPACITANCE
c
Figure 2. FIGURE OF MERIT
+ C
−25
Q, Figure of Merit
j
T
V
A
f = 50 MHz
R
, AMBIENT TEMPERATURE
f, FREQUENCY (MHz)
= 3.0 Vdc
Min
200
0
+25
100
C
+50
R
f = 1.0 MHz (Note 1)
, Capacitance Ratio
Min
5.0
V
T
A
R
= 25°C
= 3 Vdc
+75
C
3
/C
25
+100
Max
6.5
+125
1000