IRLML2244TRPBF International Rectifier, IRLML2244TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRLML2244TRPBF
• Description: MOSFET P-CH 20V 4.3A SOT23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML2244TRPBF

• Input Capacitance (ciss) @ Vds: 570pF @ 16V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 6.9nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 0.042ohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 54 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.3 A
• Power Dissipation: 1.3 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 6.9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML2244TRPBFTR

IRLML2244TRPbF
10000
4
1000
100
10
Fig 7. Typical Source-Drain Diode
100
0.1
10
1
1
Fig 5. Typical Capacitance Vs.
0.3
Drain-to-Source Voltage
-V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
-V SD , Source-to-Drain Voltage (V)
T J = 150°C
0.5
C oss
C rss
C iss
f = 1 KHZ
10
0.7
T J = 25°C
0.9
V GS = 0V
100
1.1
0.01
100
0.1
14
12
10
10
Fig 8. Maximum Safe Operating Area
1
8
6
4
2
0
0
0
T A = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
I D = -4.3A
-V DS , Drain-to-Source Voltage (V)
Gate-to-Source Voltage
V DS = -16V
V DS = -10V
4
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
8
12
10
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16
100μsec
1msec
10msec
100
20