IRFH8318TR2PBF International Rectifier, IRFH8318TR2PBF Datasheet - Page 6

• Manufacturer Part Number: IRFH8318TR2PBF
• Description: MOSFET N-CH 30V 21A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8318TR2PBF

• Input Capacitance (ciss) @ Vds: 3180pF @ 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Power - Max: 3.6W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Power Dissipation Pd: 3.6W
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 59 W
• Gate Charge Qg: 41 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8318TR2PBFTR

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Fig 17. Gate Charge Test Circuit
1K
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Fig 16.
SD
S
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DUT
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L
„
G
+
HEXFET
VCC
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®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
for N-Channel
Fig 18. Gate Charge Waveform
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgodr
V
V
I
SD
GS
DD
www.irf.com
=10V
Vgs
Id