NTMFS4826NET1G ON Semiconductor, NTMFS4826NET1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4826NET1G
• Description: MOSFET N-CH 30V 66A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4826NET1G

• Input Capacitance (ciss) @ Vds: 1850pF @ 12V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 870mW
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Forward Transconductance Gfs (max / Min): 62 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.16 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Fall Time: 5.2 ns
• Gate Charge Qg: 13.5 nC
• Rise Time: 39.8 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2500
2250
2000
1750
1500
1250
1000
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
750
500
250
1.70
1.55
1.40
1.25
1.10
0.95
0.80
0.65
0.50
0
0
0
2
−50
Figure 3. On−Resistance vs. Gate−to−Source
C
C
C
iss
oss
rss
Figure 5. On−Resistance Variation with
3
−25
V
ID = 30 A
V
V
DS
GS
Figure 7. Capacitance Variation
GS
5
, DRAIN−TO−SOURCE VOLTAGE (V)
T
4
= 10 V
, GATE−TO−SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (°C)
0
5
Temperature
10
25
Voltage
6
50
7
15
8
75
T
TYPICAL CHARACTERISTICS
ID = 30 A
T
J
9
J
= 25°C
100
= 25°C
20
10
http://onsemi.com
125
11
25
150
4
10,000
12
10
11
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
9
8
7
6
5
4
3
2
1
0
1000
100
0
10
Q
0
gs
15
2
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
5
Drain−to−Source Voltage vs. Total Charge
V
20
4
GS
V
V
DS
Q
= 0 V
DS
V
V
gd
GS
Figure 8. Gate−to−Source and
GS
25
, DRAIN−TO−SOURCE VOLTAGE (V)
10
Q
6
g
= 11.5 V
, TOTAL GATE CHARGE (nC)
= 4.5 V
I
D
, DRAIN CURRENT (A)
30
8
15
Gate Voltage
vs. Voltage
T
T
QT
35
10
J
J
= 150°C
= 125°C
20
40
12
V
GS
45
14
25
ID = 30 A
T
J
= 25°C
T
50
16
J
= 25°C
30
55
18
16
14
12
10
8
6
4
2
0
60
20