NTMFS4923NET1G ON Semiconductor, NTMFS4923NET1G Datasheet - Page 5

• Manufacturer Part Number: NTMFS4923NET1G
• Description: MOSFET N-CH 30V 91A SO-8FL
• Manufacturer: ON Semiconductor
• Series: -r

Specifications of NTMFS4923NET1G

• Input Capacitance (ciss) @ Vds: 4850pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Power - Max: 930mW
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4500
4000
3500
3000
2500
2000
1500
1000
1000
1000
0.01
500
100
100
0.1
10
10
0.01
0
1
1
0
1
Figure 9. Resistive Switching Time Variation
R
Thermal Limit
Package Limit
0 ≤ V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
V
I
V
D
C
DS(on)
DD
GS
= 15 A
= 25°C
V
= 15 V
= 10 V
V
GS
5
DS
DS
Figure 7. Capacitance Variation
Limit
≤ 20 V
, DRAIN−TO−SOURCE VOLTAGE (V)
, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
R
G
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
C
C
C
oss
iss
rss
15
10
1
20
TYPICAL CHARACTERISTICS
10
V
T
J
GS
= 25°C
25
= 0 V
http://onsemi.com
t
t
100 ms
t
10 ms
d(off)
t
d(on)
10 ms
1 ms
dc
f
r
100
100
30
5
130
120
100
110
10
30
25
20
15
10
90
80
70
60
50
40
30
20
10
11
9
8
7
6
5
4
3
2
1
0
5
0
0
0
0.4
25
Figure 10. Diode Forward Voltage vs. Current
Figure 12. Maximum Avalanche Energy vs.
Drain−to−Source Voltage vs. Total Charge
Qgs
T
V
5
J
GS
, STARTING JUNCTION TEMPERATURE (°C)
V
0.5
SD
= 0 V
50
10
Starting Junction Temperature
Figure 8. Gate−to−Source and
Qgd
, SOURCE−TO−DRAIN VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
T
J
15
= 125°C
0.6
20
75
QT
0.7
25
100
30
T
0.8
J
= 25°C
35
I
D
V
V
I
T
= 29 A
D
125
40
J
DD
GS
= 30 A
= 25°C
0.9
= 15 V
= 10 V
45
150
1.0
50