LMH6584VV National Semiconductor, LMH6584VV Datasheet - Page 5

• Manufacturer Part Number: LMH6584VV
• Manufacturer: National Semiconductor

Specifications of LMH6584VV

• Array Configuration: 32x16
• Number Of Arrays: 1
• Screening Level: Industrial
• Pin Count: 144
• Package Type: LQFP
• Power Supply Requirement: Dual
• Lead Free Status / RoHS Status: Supplier Unconfirmed

V
PSRR
XTLK
ISOL
I
I
Miscellaneous Performance
R
C
C
R
CMVR
I
Digital Control
V
V
V
V
T
T
CC
EE
O
S
H
Symbol
OUT
IH
IL
OH
OL
IN
IN
IN
O
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.
Note 2: Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)
Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).
Note 3: The maximum output current (I
Note 4: The maximum power dissipation is a function of T
P
Note 5: Electrical Table values apply only for factory testing conditions at the temperature indicated. No guarantee of parametric performance is indicated in the
electrical tables under conditions different than those tested.
Note 6: Slew Rate is the average of the rising and falling edges.
Note 7: Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will
also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.
Note 8: Room Temperature limits are 100% production tested at 25°C. Device self heating results in T
steady state conditions. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC) methods.
Note 9: Negative input current implies current flowing out of the device.
Note 10: Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
Note 11: This parameter is guaranteed by design and/or characterization and is not tested in production.
Note 12: The channel bandwidth varies over the different channel combinations and with expansion. See the application section for more details.
D
= (T
J(MAX)
Output Voltage Range
Power Supply Rejection Ratio
DC Crosstalk
DC Off Isloation
Positive Supply Current
Negative Supply Current
Tri State Supply Current
Input Resistance
Input Capacitance
Input Capacitance
Output Resistance Enabled
Output Resistance Disabled
Input Common Mode Voltage
Range
Output Current
Input Voltage High
Input Voltage Low
Output Voltage High
Output Voltage Low
Setup Time
Hold Time
– T
A
)/ θ
JA
. All numbers apply for packages soldered directly onto a PC Board.
Parameter
OUT
) is determined by device power dissipation limitations.
J(MAX)
R
R
R
R
DC
DC, Channel to Channel
DC
R
R
RST Pin > 2.0V
Non-Inverting
Input connected to one output
Input connected to 16 outputs
(Broadcast)
Closed Loop, Enabled
Disabled, Resistance to Ground,
LMH6584
Disabled, Resistance to Ground,
LMH6585
Sourcing, V
L
L
L
L
L
L
= 100Ω, LMH5484
=
= 100Ω, LMH6585
=
=
=
and θ
∞
∞
∞
∞
, LMH6584
, LMH6585
JA
. The maximum allowable power dissipation at any ambient temperature is
O
Conditions
= 0 V
5
J
≥
T
A
(Note 8)
, however, test time is insufficient for T
−2.75
+2.9
±2.9
−3.1
+3.3
±3.7
±2.5
Min
−60
−72
±60
1.1
2.0
41
(Note 7)
±3.1
±3.2
±3.6
±3.9
±3.1
>2.4
<0.4
Typ
−80
−80
210
200
100
300
±80
1.3
45
37
12
50
9
8
8
(Note 8)
Max
265
255
1.4
0.8
60
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J
to reach
Units
mΩ
mA
mA
mA
mA
dB
dB
dB
kΩ
pF
pF
kΩ
ns
ns
V
V
V
V
V
V