BC856AS-7 Diodes Zetex, BC856AS-7 Datasheet
BC856AS-7
Manufacturer Part Number
BC856AS-7
Description
Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R
Manufacturer
Diodes Zetex
Type
PNPr
Datasheet
1.BC856AS-7.pdf
(3 pages)
Specifications of BC856AS-7
Package
6SOT-363
Supplier Package
SOT-363
Pin Count
6
Minimum Dc Current Gain
125@2mA@5V
Maximum Operating Frequency
100(Min) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA V
Maximum Collector Emitter Saturation Voltage
0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Voltage
65 V
Maximum Emitter Base Voltage
5 V
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC856AS-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Mechanical Data
Features
Maximum Ratings
Electrical Characteristics
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Emitter Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30834 Rev. 7 - 2
Ideally Suited for Automatic Insertion
For Switching and AF Amplifier Applications
Complementary NPN Types Available (BC846AS)
Lead Free/RoHS Compliant (Note 1)
"Green" Device (Note 4 and 5)
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Pin Connections: See Diagram
Marking Codes: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB; pad layout as shown on page 3 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our
Short duration pulse test used to minimize self-heating effect.
No purposefully added lead.
website at http://www.diodes.com/datasheets/ap02001.pdf.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
www.diodes.com
DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
K
J
V
V
V
Symbol
V
V
1 of 3
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
BE(SAT)
BE(ON)
I
I
I
C
h
CES
CBO
CBO
f
C
E
6
1
Top View
FE
T
CB
1
1
B
B
Symbol
5
2
1
T
2
V
V
V
R
Please click here to visit our online spice models database.
j
A
H
I
I
, T
P
CBO
CEO
EBO
CM
I
EM
θ JA
C
E
C
4
3
d
D
2
2
-600
stg
Min
125
100
-80
-65
—
—
—
—
—
—
—
—
-5
F
B
-250
-700
-850
-650
Typ
180
-75
C
—
—
—
—
—
—
—
—
3
L
Max
-300
-650
-750
-820
250
-4.0
-15
-15
-65 to +150
—
—
—
—
—
—
Value
-100
-200
-200
-5.0
200
625
-80
-65
M
Unit
MHz
mV
mV
mV
nA
nA
µA
pF
—
V
V
V
I
I
I
V
I
I
I
I
V
V
V
V
V
V
f = 100MHz
V
C
C
E
C
C
C
C
BC856AS
All Dimensions in mm
CE
CE
CE
CE
CB
CB
CE
CB
Dim
= 10μA, I
= 10mA, I
= 1μA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
B
C
H
K
M
A
D
F
L
α
J
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -80V
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
Test Condition
SOT-363
C
0.10
1.15
2.00
0.30
1.80
0.90
0.25
0.10
Min
0.65 Nominal
B
⎯
0°
© Diodes Incorporated
B
= 0
B
B
°C/W
= 0
Unit
C
C
C
A
C
mW
= 0
mA
mA
mA
B
B
°C
= -0.5mA
= -0.5mA
V
V
V
= -2.0mA
= -2.0mA
= -10mA
= -10mA,
= 150°C
= -5.0mA
= -5.0mA
BC856AS
Max
0.30
1.35
2.20
0.40
2.20
0.10
1.00
0.40
0.25
8°
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BC856AS-7 Summary of contents
Page 1
... C mV — -820 V = -5.0V -10mA -80V — - — - -30V CB — -4.0 µ -30V 150° -5.0V -10mA — — MHz f = 100MHz 3 — -10V 1.0MHz CB © Diodes Incorporated Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° = -5.0mA = -5.0mA BC856AS ...
Page 2
... T , AMBIENT TEMPERATURE (°C) A Fig. 1 Power Derating Curve (Note 2) DS30834 Rev 150 100 125 www.diodes.com BC856AS © Diodes Incorporated ...
Page 3
... Ordering Information (Note 6) Device BC856AS-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Data Code Key Year 2007 Code U Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...