BC857BLP-7 Diodes Zetex, BC857BLP-7 Datasheet - Page 2

• Manufacturer Part Number: BC857BLP-7
• Description: Trans GP BJT PNP 45V 0.1A 3-Pin DFN T/R
• Manufacturer: Diodes Zetex
• Type: PNPr

Specifications of BC857BLP-7

• Package: 3DFN
• Supplier Package: DFN
• Pin Count: 3
• Minimum Dc Current Gain: 220@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA V
• Maximum Collector Emitter Saturation Voltage: 0.3@0.5mA@10mA|0.65@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 4) @T
Thermal Resistance, Junction to Ambient Air (Note 4) @T
Operating and Storage Temperature Range
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
BC857BLP
Document number: DS30526 Rev. 10 - 2
300
250
200
150
100
4. Device mounted on FR-4 PCB, Diodes Inc. suggested pad layout document can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
50
0
0
R
25
θJA
Characteristic (Note 5)
T , AMBIENT TEMPERATURE (°C)
vs. Ambient Temperature (Note 4)
A
= 500 C/W
Characteristic
Characteristic
Fig. 1 Power Dissipation
@T
°
50
A
A
= 25°C
= 25°C unless otherwise specified
75
@T
A
100
= 25°C unless otherwise specified
125
A
= 25°C
150
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Symbol
V
V
2 of 4
BV
BV
V
BV
C
CE(sat)
I
BE(sat)
BE(on)
h
CBO
CBO
f
FE
CBO
CEO
EBO
T
T
Symbol
Symbol
J
V
V
V
R
, T
P
CBO
CEO
EBO
I
θ JA
C
D
-600
Min
STG
220
100
-50
-45
—
—
—
—
—
—
—
-5
Fig. 2
-250
-700
-850
-670
-710
Typ
260
-90
3.0
Typical DC Current Gain vs. Collector Current
—
—
—
—
—
—
I , COLLECTOR CURRENT (mA)
C
Max
-300
-650
-750
-820
-4.0
475
-55 to +150
-15
—
—
—
—
—
—
—
Value
Value
-100
-5.0
250
500
-50
-45
MHz
Unit
mV
mV
mV
nA
µA
pF
—
V
V
V
Test Condition
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
= 1μA, I
= 10μA, I
= 10mA, I
= -10mA, I
= -100mA, I
= -10mA, I
= -100mA, I
= -5.0V, I
= -5.0V, I
= -5.0V, I
= -30V
= -30V, T
= -5.0V, I
= -10V, f = 1.0MHz
BC857BLP
C
© Diodes Incorporated
B
°C/W
B
= 0
Unit
Unit
mW
mA
February 2011
B
B
°C
= 0
V
V
V
C
C
C
C
= 0
A
B
B
= -0.5mA
= -0.5mA
= -2.0mA
= -2.0mA
= -10mA
= 150°C
= -10mA,
= -5.0mA
= -5.0mA