MCP1640T-I/MC Microchip Technology, MCP1640T-I/MC Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
MCP1640T-I/MC
Manufacturer Part Number
MCP1640T-I/MC
Description
500 KHz, 300 MA Syn. Boost, Output Disconnect & PWM/PFM Enabled 8 DFN 2x3mm T/R
Manufacturer
Microchip Technology
Type
Step-Up (Boost)r
Specifications of MCP1640T-I/MC
Internal Switch(s)
Yes
Synchronous Rectifier
Yes
Number Of Outputs
1
Voltage - Output
2 ~ 5.5 V
Current - Output
100mA
Frequency - Switching
500kHz
Voltage - Input
0.8 ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-DFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MCP1640T-I/MC
Manufacturer:
MICROCHIP
Quantity:
12 000
1.0
Absolute Maximum Ratings †
EN, FB, V
EN, FB ...........<greater of V
Output Short Circuit Current....................... Continuous
Output Current Bypass Mode........................... 400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65
Ambient Temp. with Power Applied......-40
Operating Junction Temperature........-40
ESD Protection On All Pins:
DC CHARACTERISTICS
2010 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, V
T
Boldface specifications apply over the T
Input Characteristics
Minimum Start-Up Voltage
Minimum Input Voltage After
Start-Up
Output Voltage Adjust Range
Maximum Output Current
Feedback Voltage
Feedback Input Bias Current
Quiescent Current – PFM
Mode
Quiescent Current – PWM
Mode
Quiescent Current – Shutdown
NMOS Switch Leakage
PMOS Switch Leakage
NMOS Switch ON Resistance
PMOS Switch ON Resistance
Note 1:
A
= +25°C.
2:
3:
4:
5:
ELECTRICAL
CHARACTERISTICS
HBM........................................................ 3 kV
MM........................................................ 300 V
IN,
Parameters
3.3 K resistive load, 3.3V
For V
I
estimated by: (I
220 resistive load, 3.3V
Peak current limit determined by characterization, not production tested.
Q
V
is measured from V
SW
IN
, V
> V
OUT
OUT
- GND ........................... +6.5V
, V
QPFM
OUT
OUT
or V
* (V
will not remain in regulation.
OUT
R
R
I
I
DS(ON)N
I
QSHDN
DS(ON)P
V
QPWM
A
Sym
QPFM
OUT
IN
I
OUT
I
I
I
V
V
V
OUT
; V
VFB
NLK
PLK
OUT
range of -40
OUT
FB
IN
IN
> (GND - 0.3V)
IN
/V
o
o
(15 mA).
C to +150
C to +125
o
(1 mA).
quiescent current will vary with boost ratio. V
IN
C to +85
)), (I
1.175
Min
100
2.0
—
—
—
—
—
—
—
—
—
—
QPWM
o
C to +85
o
o
o
IN
C
C
C
= 1.2V, C
* (V
o
0.65
0.35
1.21
0.05
Typ
150
150
350
220
0.7
0.3
0.6
0.9
C.
10
19
OUT
/V
OUT
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
IN
)).
= C
1.245
Max
IN
0.8
5.5
2.3
0.2
30
—
—
—
—
—
—
—
—
1
= 10 µF, L = 4.7 µH, V
in
MCP1640/B/C/D
the
Units
mA
mA
mA
µA
pA
µA
µA
µA
µA
V
V
V
V
operational
IN
Note 1
Note 1
V
1.2V V
1.5V V
3.3V V
—
—
Measured at V
EN = V
Note 3
Measured at V
I
V
Includes N-Channel and
P-Channel Switch Leakage
V
5.5V V
V
V
V
V
OUT
quiescent current can be
OUT
OUT
IN
IN
OUT
IN
IN
OUT
= V
= VS
= 3.3V, I
= 3.3V, I
= 0 mA; Note 3
= 5.5V
V
= EN = GND;
IN
IN
IN
EN
IN
SW
= 3.3V, I
Conditions
, 2.0V V
, 3.3V V
, 5.0V V
W
, I
IN
= V
sections
= 5V; V
OUT
= GND;
; Note 2
SW
SW
DS22234A-page 3
FB
OUT
OUT
OUT
= 0 mA;
= 100 mA
= 100 mA
= GND
OUT
OUT
OUT
; EN = V
OUT
= 15 mA,
= 4.0V;
of
=
this
IN