PIC12HV609-I/MS Microchip Technology, PIC12HV609-I/MS Datasheet - Page 104
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
PIC12HV609-I/MS
Manufacturer Part Number
PIC12HV609-I/MS
Description
1.75KB Flash, 64B RAM, 6 I/O, 8MHz Internal Oscillator 8 MSOP 3x3mm TUBE
Manufacturer
Microchip Technology
Series
PIC® 12Fr
Datasheets
1.PIC12F609T-ISN.pdf
(212 pages)
2.PIC12F609T-ISN.pdf
(8 pages)
3.PIC12F609T-ISN.pdf
(26 pages)
4.PIC16F616T-ISL.pdf
(8 pages)
Specifications of PIC12HV609-I/MS
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
5
Program Memory Size
1.75KB (1K x 14)
Program Memory Type
FLASH
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-MSOP, Micro8™, 8-uMAX, 8-uSOP,
Processor Series
PIC12H
Core
PIC
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
RS- 232 , USB
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
5
Number Of Timers
2
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC12HV609-I/MS
Manufacturer:
MICROCHIP
Quantity:
765
- PIC12F609T-ISN PDF datasheet
- PIC12F609T-ISN PDF datasheet #2
- PIC12F609T-ISN PDF datasheet #3
- PIC16F616T-ISL PDF datasheet #4
- Current page: 104 of 212
- Download datasheet (2Mb)
PIC12F609/615/617/12HV609/615
11.4.6
In Half-Bridge applications where all power switches
are modulated at the PWM frequency, the power
switches normally require more time to turn off than to
turn on. If both the upper and lower power switches are
switched at the same time (one turned on, and the
other turned off), both switches may be on for a short
period of time until one switch completely turns off.
During this brief interval, a very high current (shoot-
through current) will flow through both power switches,
shorting the bridge supply. To avoid this potentially
destructive shoot-through current from flowing during
switching, turning on either of the power switches is
normally delayed to allow the other switch to
completely turn off.
In Half-Bridge mode, a digitally programmable dead-
band delay is available to avoid shoot-through current
from destroying the bridge power switches. The delay
occurs at the signal transition from the non-active state
to the active state. See Figure 11-13 for illustration. The
lower seven bits of the associated PWMxCON register
(Register 11-3) sets the delay period in terms of
microcontroller instruction cycles (T
FIGURE 11-14:
DS41302D-page 104
Standard Half-Bridge Circuit (“Push-Pull”)
PROGRAMMABLE DEAD-BAND
DELAY MODE
EXAMPLE OF HALF-BRIDGE APPLICATIONS
CY
or 4 T
P1A
P1B
OSC
).
FET
Driver
FET
Driver
FIGURE 11-13:
P1A
P1B
td = Dead-Band Delay
Note 1: At this time, the TMR2 register is equal to the
(2)
(2)
V+
V-
(1)
2: Output signals are shown as active-high.
td
Pulse Width
PR2 register.
Load
Period
td
EXAMPLE OF HALF-
BRIDGE PWM OUTPUT
2010 Microchip Technology Inc.
+
V
-
+
V
-
(1)
Period
(1)
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