PIC18LF13K22-E/ML Microchip Technology, PIC18LF13K22-E/ML Datasheet - Page 15
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PIC18LF13K22-E/ML
Manufacturer Part Number
PIC18LF13K22-E/ML
Description
8KB Flash, 256bytes RAM, 256bytes EEPROM, 16MIPS, NanoWatt XLP 20 QFN 4x4mm TUBE
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheets
1.PIC18LF13K22-ISS.pdf
(388 pages)
2.PIC18LF13K22-ISS.pdf
(12 pages)
3.PIC18LF13K22-ISS.pdf
(36 pages)
Specifications of PIC18LF13K22-E/ML
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
17
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-VQFN Exposed Pad, 20-HVQFN, 20-SQFN, 20-DHVQFN
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
EUSART, I2C, SPI
Maximum Clock Frequency
32 KHz
Number Of Programmable I/os
18
Number Of Timers
4
Operating Supply Voltage
1.8 V to 3.6 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
A/d Bit Size
10 bit
A/d Channels Available
12
Height
0.88 mm
Length
4 mm
Supply Voltage (max)
3.6 V
Supply Voltage (min)
1.8 V, 2.7 V
Width
4 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
4.2
Programming program Flash is accomplished by first
loading data into the write buffer and then initiating a
programming sequence. The write and erase buffer
sizes shown in Table 4-4 can be mapped to any
location of the same size beginning at 000000h. The
actual memory write sequence takes the contents of
this buffer and programs the proper amount of program
Flash that contains the Table Pointer.
The programming duration is externally timed and is
controlled by PGC. After a Start Programming
command is issued (4-bit command, ‘1111’), a NOP is
issued, where the 4th PGC is held high for the duration
of the programming time, P9.
TABLE 4-4:
TABLE 4-5:
© 2009 Microchip Technology Inc.
PIC18F14K22
PIC18F13K22
Step 1: Direct access to program Flash.
Step 2: Point to row to write.
Step 3: Load write buffer. Repeat for all but the last two bytes.
Step 4: Load write buffer for last two bytes and start programming.
To continue writing data, repeat steps 2 through 4, where the Address Pointer is incremented by 2 at each iteration of
the loop.
Command
0000
0000
0000
0000
0000
0000
0000
0000
0000
1101
1111
0000
4-bit
Program Flash Programming
WRITE AND ERASE BUFFER SIZES
WRITE PROGRAM FLASH CODE SEQUENCE
0E <Addr[21:16]>
0E <Addr[15:8]>
0E <Addr[7:0]>
<MSB><LSB>
<MSB><LSB>
Data Payload
9C A6
8E A6
6E F8
6E F7
6E F6
84 A6
00 00
Devices
BSF
BCF
BSF
MOVLW <Addr[21:16]>
MOVWF TBLPTRU
MOVLW <Addr[15:8]>
MOVWF TBLPTRH
MOVLW <Addr[7:0]>
MOVWF TBLPTRL
Write 2 bytes and post-increment address by 2.
Write 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
Advance Information
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
PIC18F1XK22/LF1XK22
After PGC is brought low, the programming sequence
is terminated. PGC must be held low for the time
specified by parameter P10 to allow high-voltage
discharge of the memory array.
The code sequence to program a PIC18F1XK22/
LF1XK22 device is shown in Table 4-5. The flowchart
shown in Figure 4-4 depicts the logic necessary to
completely write a PIC18F1XK22/LF1XK22 device.
The timing diagram that details the Start Programming
command and parameters P9 and P10 is shown in
Figure 4-5.
Note:
Core Instruction
Write Buffer Size
The TBLPTR register must point to the
same region when initiating the program-
ming sequence as it did when the write
buffers were loaded.
(bytes)
16
8
Erase Size (bytes)
DS41357B-page 15
64
64