PIC18LF43K22-E/PT Microchip Technology, PIC18LF43K22-E/PT Datasheet - Page 438
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PIC18LF43K22-E/PT
Manufacturer Part Number
PIC18LF43K22-E/PT
Description
8KB, Flash, 3968bytes-RAM,8-bit Family,nanoWatt XLP 44 TQFP 10x10x1mm TRAY
Manufacturer
Microchip Technology
Series
PIC® XLP™ 18Fr
Datasheet
1.PIC18F26J13-ISS.pdf
(496 pages)
Specifications of PIC18LF43K22-E/PT
Core Processor
PIC
Core Size
8-Bit
Speed
48MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
35
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 3.6 V
Data Converters
A/D 30x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
44-TQFP
Processor Series
PIC18LF
Core
PIC
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DV164136
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18LF43K22-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
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PIC18(L)F2X/4XK22
27.9
DS41412D-page 438
DC CHARACTERISTICS
D170
D171
D172
D173
D174
D175
D176
D177
D178
D179
D180
D181
D182
D183
D184
Note 1:
Param
No.
2:
3:
4:
5:
† Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
Memory Programming Requirements
V
I
E
V
V
T
T
T
E
V
V
V
V
T
T
DDP
Sym
DEW
RETD
REF
IW
RETD
PP
D
DRW
DRW
P
PR
PR
IW
IW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write instruc-
tions.
Refer to
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable V
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
Self-write and Block Erase.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
V
V
(PIC18LF)
V
(PIC18F)
Self-timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
DD
DD
Section 7.8 “Using the Data EEPROM”
for Read/Write (PIC18LF)
for Read/Write (PIC18F)
for Read (PIC18LF)
for Read (PIC18F)
for Row Erase or Write
for Row Erase or Write
Characteristic
PP
/RE3 pin
(2)
(1)
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C T
100K
10K
Min
1.8
1.8
1M
1.8
1.8
2.2
2.2
40
40
—
—
—
8
PP
output. Circuitry to limit the ICD 2 V
for a more detailed discussion on data EEPROM
Typ†
10M
—
—
—
—
—
—
—
—
—
—
—
—
3
2
Max
3.6
5.5
3.6
5.5
3.6
5.5
10
—
—
—
—
—
—
9
4
Units
Year
Year
E/W
E/W
E/W
mA
A
ms
ms
V
V
V
V
V
V
V
+125°C
2010 Microchip Technology Inc.
(Note 3), (Note 4)
-40C to +85C
Using EECON to read/
write
Provided no other
specifications are violated
-40°C to +85°C
-40C to +85C (Note 5)
Provided no other
specifications are violated
PP
voltage must be
Conditions
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