S29GL256P11FFIV10 Spansion Inc., S29GL256P11FFIV10 Datasheet - Page 28

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S29GL256P11FFIV10

Manufacturer Part Number
S29GL256P11FFIV10
Description
IC 256M PAGE-MODE FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet

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Notes
1. See
2. See the section on DQ3 for information on the sector erase timeout.
26
No
Table 12.1 on page 61
PASS. Device returns
to reading array.
DQ3 = 1?
Yes
Poll DQ3.
Yes
No
for erase command sequence.
Write Sector Erase Cycles:
Sector Address, Data 30h
Address 555h, Data AAh
Address 2AAh, Data 55h
Address 555h, Data AAh
Address 555h, Data 80h
Address 2AAh, Data 55h
Perform Write Operation
Write Unlock Cycles:
Sector Addresses
(Recommended)
(see
Write Additional
Status Algorithm
Wait 4 ms
DQ5 = 1?
Additional
Sectors?
Done?
Yes
Figure
Select
Yes
No
Yes
7.4)
D a t a
FAIL. Write reset command
Last Sector
Selected?
to return to reading array.
S29GL-P MirrorBit
No
No
S h e e t
Figure 7.3 Sector Erase Operation
( A d v a n c e
TM
Flash Family
• Each additional cycle must be written within t
• The host system may monitor DQ3 or wait t
• No limit on number of sectors
• Commands other than Erase Suspend or selecting additional
Unlock Cycle 1
Unlock Cycle 2
Command Cycle 1
Command Cycle 2
Command Cycle 3
Specify first sector for erasure
Status may be obtained by reading DQ7, DQ6 and/or DQ2.
Error condition (Exceeded Timing Limits)
acceptance of erase commands
sectors for erasure during timeout reset device to reading array
data
I n f o r m a t i o n )
S29GL-P_00_A3 November 21, 2006
SEA
SEA
to ensure
timeout

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