SEMIX202GB12E4S SEMIKRON, SEMIX202GB12E4S Datasheet - Page 2

• Manufacturer Part Number: SEMIX202GB12E4S
• Description: SEMIX2S
• Manufacturer: SEMIKRON

Specifications of SEMIX202GB12E4S

• Family/system: SEMiX
• Voltage (v): 1200
• Current (a): 200
• Chip-type: IGBT 4 (Trench)
• Case: SEMiX 2s

SEMiX202GB12E4s
Trench IGBT Modules
SEMiX202GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• High short circuit capability
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• Dynamic values apply to the
2
SEMiX
coefficient
max.
T
following combination of resistors:
R
R
R
R
j
CE(sat)
Gon,main
Goff,main
G,X
E,X
=150°C
= 0,5 
= 2,2 
with positive temperature
= 1,0 
= 1,0 
®
2s
GB
C
=125°C
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
Temperatur Sensor
R
B
RRM
F
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
100
100/125
rr
s
t
= V
EC
Rev. 1 – 17.01.2012
I
V
chip
I
di/dt
V
V
res., terminal-chip
Conditions
per diode
per module
to heat sink (M5)
T
R
F
F
GE
GE
CC
c
(T)
= 200 A
= 200 A
=100°C (R
=R
= 0 V
off
= -15 V
= 600 V
= 3400 A/µs
100
exp[B
25
=5 k)
100/125
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
(1/T-1/T
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
100
)]; T[K];
min.
1.1
0.7
4.0
5.3
2.5
3
493 ± 5%
0.045
3550
±2%
typ.
31.5
160
2.2
2.1
1.3
0.9
4.5
6.3
0.7
12
18
1
© by SEMIKRON
max.
2.52
0.26
250
2.5
1.5
1.1
5.1
6.8
5
5
Unit
K/W
K/W
m
m
m
m
Nm
Nm
Nm
µC
mJ
nH

V
V
V
V
A
K
g