STK11C68-C35I Cypress Semiconductor Corp, STK11C68-C35I Datasheet - Page 8

• Manufacturer Part Number: STK11C68-C35I
• Description: STK11C68-C35I
• Manufacturer: Cypress Semiconductor Corp

Specifications of STK11C68-C35I

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 64K (8K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-CDIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

AC Switching Characteristics
SRAM Read Cycle
Switching Waveforms
Notes
Document Number: 001-50638 Rev. *A
t
t
t
t
t
t
t
t
t
t
t
4. WE must be High during SRAM Read cycles.
5. I/O state assumes CE and OE < V
6. Measured ±200 mV from steady state output voltage.
ACE
RC
AA
DOE
OHA
LZCE
HZCE
LZOE
HZOE
PU
PD
Parameter
Cypress
[5]
[4]
[3]
[3]
[5]
[6]
[6]
[6]
[6]
Parameter
t
t
t
t
t
t
t
t
t
t
t
ELQV
AVAV,
AVQV
GLQV
AXQX
ELQX
EHQZ
GLQX
GHQZ
ELICCH
EHICCL
t
ELEH
Alt
IL
and WE > V
Chip Enable Access Time
Read Cycle Time
Address Access Time
Output Enable to Data Valid
Output Hold After Address Change
Chip Enable to Output Active
Chip Disable to Output Inactive
Output Enable to Output Active
Output Disable to Output Inactive
Chip Enable to Power Active
Chip Disable to Power Standby
Figure 6. SRAM Read Cycle 2: CE and OE Controlled
Figure 5. SRAM Read Cycle 1: Address Controlled
IH
; device is continuously selected.
Description
Min
25
5
5
0
0
25 ns
Max
25
10
10
10
25
25
[4, 5]
Min
35
[4]
5
5
0
0
35 ns
Max
35
35
15
13
13
35
Min
45
5
0
0
5
45 ns
STK11C68
Max
45
45
20
15
15
45
Page 8 of 17
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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