DS92LV010ATMX/HALF National Semiconductor, DS92LV010ATMX/HALF Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/4/469/national_semiconductor_sml.jpg)
DS92LV010ATMX/HALF
Manufacturer Part Number
DS92LV010ATMX/HALF
Description
Manufacturer
National Semiconductor
Datasheet
1.DS92LV010ATMXHALF.pdf
(10 pages)
Specifications of DS92LV010ATMX/HALF
Number Of Elements
1
Operating Supply Voltage (typ)
3.3V
Power Dissipation
1.025W
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Number Of Receivers
1
Number Of Drivers
1
Lead Free Status / RoHS Status
Compliant
www.national.com
V
ΔV
V
ΔV
I
V
V
I
V
V
I
V
V
I
I
V
I
I
I
I
C
Symbol
OSD
OS
IN
IH
IL
CCD
CCR
CCZ
CC
OD
OS
OH
OL
TH
TL
IH
IL
CL
output
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
3.3V DC Electrical Characteristics
T
OD
OS
A
= −40°C to +85°C unless otherwise noted, V
Supply Voltage (V
Enable Input Voltage (DE,
RE)
Driver Input Voltage (DIN)
Receiver Output Voltage
Bus Pin Voltage (DO/RI±)
Driver Short Circuit Current
ESD (HBM 1.5 kΩ, 100 pF)
Maximum Package Power Dissipation at 25°C
(R
SOIC
Output Differential Voltage
V
Offset Voltage
Offset Magnitude Change
Output Short Circuit Current
Voltage Output High
Voltage Output Low
Output Short Circuit Current
Input Threshold High
Input Threshold Low
Input Current
Minimum Input High Voltage
Maximum Input Low Voltage
Input High Current
Input Low Current
Input Diode Clamp Voltage
Power Supply Current
Capacitance @ BUS Pins
OUT
OD
)
Magnitude Change
Parameter
CC
)
−0.3V to (V
−0.3V to (V
−0.3V to (V
−0.3V to + 3.9V
R
V
V
Inputs Open
Inputs Shorted
Inputs Terminated, R
I
V
DE = 0V
DE = 0V, V
V
V
V
I
DE = RE = V
DE = RE = 0V
DE = 0V, RE = V
DE = V
OL
CLAMP
O
ID
OUT
CC
IN
IN
L
= 27Ω, Figure 1
= 0V, DE = V
= 2.0 mA, V
= +100 mV
= V
= GND or 0.4V
Continuous
= 0V, V
CC
CC
CC
= 0V, V
1025 mW
CC
= −18 mA
(Notes 1, 2)
CC
CC
>2.0 kV
+ 0.3V)
+ 0.3V)
+ 0.3V)
, RE = 0V, R
= 3.3V ± 0.3V
or 2.4V
6.0V
IN
IN
ID
CC
= +2.4V, or 0V
= +2.4V, or 0V
ID
= +100 mV
, R
CC
= −100 mV
CC
(Notes 2, 3)
Conditions
L
= 27Ω
L
L
2
= 27Ω
= 27Ω
Recommended Operating
Conditions
Junction Temperature
Storage Temperature
Range
Lead Temperature
I
Supply Voltage (V
Supply Voltage (V
Receiver Input Voltage
Operating Free Air
Temperature
OH
Derate SOIC Package
(Soldering, 4 sec.)
= −400 µA
CC
CC
DO+/RI+,
DO−/RI−
R
DO+/RI+,
DO−/RI−
DIN, DE,
RE
V
DO+/RI+,
DO−/RI−
), or
)
OUT
CC
Pin
−100
GND
−1.5
Min
140
−20
−20
2.8
2.8
2.8
2.8
2.0
−5
Min
−40
1
3.0
4.5
0.0
−65°C to +150°C
−0.8
1.25
Typ
250
−12
−35
Max Units
0.1
+85
±1
±1
±1
±1
13
16
3.6
5.5
2.9
3
5
3
3
3
3
5
3
5
8.2 mW/°C
+150°C
260°C
+100
Max Units
1.65
360
−20
−85
+20
+20
V
±10
±10
0.4
0.8
7.5
30
50
20
22
°C
8
V
V
V
CC
mV
mV
mV
mA
mA
mV
mV
mA
mA
mA
mA
µA
µA
µA
µA
pF
V
V
V
V
V
V
V
V
V