AP2152ASG-13 Diodes Zetex, AP2152ASG-13 Datasheet - Page 4

• Manufacturer Part Number: AP2152ASG-13
• Manufacturer: Diodes Zetex

Specifications of AP2152ASG-13

• Short Circuit Current Limit: 700mA
• Input Voltage Range: 2.7 to 5.5V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Electrical Characteristics
Notes:
AP2142A/2152A
Document number: DS32191 Rev. 2 - 2
Symbol
R
T
I
T
I
T
T
V
LIMIT_G
I
T
I
I
LEAK-O
I
I
R
T
I
R
I
DS(ON)
Trig_G
SHORT
I
SHDN
OS_G
D(OFF)
LEAK
LIMIT
I
θ
I
V
V
SINK
D(ON)
SHDN
UVLO
REV
T
FOH
T
Blank
I
Trig
OS
HYS
FLG
DIS
Q
JA
IH
IL
R
F
4. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up / power-down when
5. Test condition for SO-8: Device mounted on FR-4 substrate PCB with minimum recommended pad layout.
6. Test condition for MSOP-8-EP and DFN3030E-8: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with minimum
3. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
Input UVLO
Input Shutdown Current
Input Quiescent Current, Dual
Input Leakage Current
Reverse Leakage Current
Switch on-resistance
Over-Load Current Limit
Ganged Over-Load Current Limit
Current limiting trigger threshold
Ganged current limiting trigger
threshold
Short-circuit current per channel
Ganged short-circuit current
Short-circuit response time
EN Input Logic Low Voltage
EN Input Logic High Voltage
EN Input leakage
Output leakage current
Output turn-on rise time
Output turn-off fall time
Output turn-on delay time
Output turn-off delay time
FLG output FET on-resistance
FLG off current
FLG blanking time
Discharge resistance (Note 4)
Thermal shutdown threshold
Thermal shutdown hysteresis
Thermal Resistance Junction-to-
Ambient
separately.
V
recommended pad on top layer and thermal vias to bottom layer ground plane.
IN
< V
UVLO
). The discharge function offers a resistive discharge path for the external storage capacitor for limited time.
Parameter
(T
A
= 25
o
V
C, V
Disabled, I
Enabled, I
Disabled, OUT grounded
Disabled, V
V
T
V
V
T
V
V
C
V
OUT1 & OUT2 tied
together, C
Output Current Slew rate (<100A/s), C
OUT1 & OUT2 tied together, Output Current Slew
rate (<100A/s), C
OUTx connected to ground, device enabled into
short circuit, C
OUT1 & OUT2 connected to ground, device
enabled into short-circuit, C
V
ground)
V
V
V
Disabled, V
C
C
C
C
I
V
C
Enabled, R
SO-8 (Note 5)
MSOP-8-EP (Note 6)
DFN3030E-8 (Note 6)
FLG
A
A
IN
IN
IN
IN
IN
IN
OUT
IN
IN
EN
FLG
IN
L
L
L
L
L
L
=4.7μF
=4.7μF
= 25
= 25
= 1μF, R
= 1μF, R
= 100μF, R
= 100μF, R
= 5V, I
= 5V, I
= 3.3V, I
= 3.3V, I
= 5V, V
= 5V, V
= 2.7V to 5.5V
= 2.7V to 5.5V
= 5V, disabled, I
= 0V to 5.5V
= 10mA
IN
= 5V
= 0V to I
0.5A DUAL CHANNEL CURRENT-LIMITED POWER
o
o
= +5.0V, unless otherwise stated)
C
C
www.diodes.com
OUT
OUT
OUT
OUT
OUT
OUT
OUT
L
load
IN
=4.7μF
load
load
OUT
OUT
Test Conditions (Note 3)
= 0
= 0V, V
= 0
OUT
= 0.5A,
= 0.5A, -40
=1kΩ
4 of 17
load
load
L
= 4V,
= 4V,
= 0V
=4.7μF
= 10Ω
= 10Ω
= 0.5A,
= 0.5A, -40
L
= I
= 10Ω
= 10Ω
=4.7μF
OUT
LIMIT
OUT
=1mA
(output shorted to
= 5V, I
o
C≤ T
SWITCH WITH OUTPUT DISCHARGE
o
SO-8
MSOP-8-EP,
DFN3030E-8
SO-8
MSOP-8-EP,
DFN3030E-8
-40
-40
L
C≤ T
=4.7μF
o
o
A
C≤ T
C≤ T
REV
≤ 85
A
AP2142A/AP2152A
≤ 85
at V
A
A
o
C
≤ 85
≤ 85
L
o
=4.7μF
IN
C
o
o
C
C
0.55
Min
1.6
1.1
1.1
2
4
Typ.
0.01
0.05
0.01
110
115
115
105
100
140
2.0
0.1
0.7
1.4
1.0
1.0
0.7
1.4
0.5
0.6
0.2
0.1
90
85
20
25
75
60
2
7
© Diodes Incorporated
October 2010
0.85
Max
110
130
180
105
135
125
170
2.4
0.1
1.7
1.7
1.5
0.3
0.5
0.3
0.8
40
15
1
1
1
1
1
o
Unit
mΩ
C/W
ms
ms
ms
ms
ms
μA
μA
μA
μA
μA
μA
μA
°C
°C
μs
Ω
Ω
V
A
A
A
A
A
A
V
V