K4S561632E-LL75 Samsung Semiconductor, K4S561632E-LL75 Datasheet - Page 7
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K4S561632E-LL75
Manufacturer Part Number
K4S561632E-LL75
Description
Manufacturer
Samsung Semiconductor
Type
SDRAMr
Datasheet
1.K4S561632E-LL75.pdf
(14 pages)
Specifications of K4S561632E-LL75
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
SDRAM 256Mb E-die (x4, x8, x16)
SDRAM 256Mb E-die (x4, x8, x16)
ABSOLUTE MAXIMUM RATINGS
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Notes :
CAPACITANCE
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x4 : DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
0
Parameter
~ DQ
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
3
supply relative to Vss
), (x8 : DQ
(V
DD
0
Pin
IN
= 3.3V, T
~ DQ
≤ V
DDQ
7
), (x16 : DQ
V
Symbol
DD
A
.
V
V
= 23°C, f = 1MHz, V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
0
~ DQ
15
V
V
Symbol
Min
-0.3
)
DD
3.0
2.0
2.4
-10
IN
T
-
, V
I
P
, V
STG
OS
REF
D
OUT
DDQ
SS
Symbol
C
C
C
=1.4V ± 200 mV)
= 0V, T
C
ADD
OUT
CLK
IN
A
Typ
3.3
3.0
= 0 to 70°C)
0
-
-
-
Min
2.5
2.5
2.5
4.0
V
DD
Max
-55 ~ +150
3.6
0.8
0.4
-1.0 ~ 4.6
-1.0 ~ 4.6
10
-
+0.3
Value
50
1
Max
3.5
3.8
3.8
6.0
Rev. 1.3 August 2004
Unit
uA
V
V
V
V
V
CMOS SDRAM
Unit
pF
pF
pF
pF
I
I
OH
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Note