MT46V64M8TG-6LAT:F Micron Technology Inc, MT46V64M8TG-6LAT:F Datasheet - Page 74
MT46V64M8TG-6LAT:F
Manufacturer Part Number
MT46V64M8TG-6LAT:F
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V64M8TG-6LATF.pdf
(91 pages)
Specifications of MT46V64M8TG-6LAT:F
Lead Free Status / RoHS Status
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Figure 38:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
NOP
74
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
512Mb: x4, x8, x16 DDR SDRAM
T2n
NOP
T3
Don’t Care
©2000 Micron Technology, Inc. All rights reserved.
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