M25PX32-VMF6E NUMONYX, M25PX32-VMF6E Datasheet

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M25PX32-VMF6E

Manufacturer Part Number
M25PX32-VMF6E
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M25PX32-VMF6E

Cell Type
NOR
Density
32Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC W
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
4M
Supply Current
12mA
Mounting
Surface Mount
Pin Count
16
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25PX32-VMF6E
Manufacturer:
ST
0
Part Number:
M25PX32-VMF6E
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25PX32-VMF6EB
Manufacturer:
ST
0
Features
March 2009
SPI bus compatible serial interface
75 MHz (maximum) clock frequency
2.7 V to 3.6 V single supply voltage
Dual input/output instructions resulting in an
equivalent clock frequency of 150 MHz:
– Dual Output Fast Read instruction
– Dual Input Fast Program instruction
32 Mbit Flash memory
– Uniform 4-Kbyte subsectors
– Uniform 64-Kbyte sectors
Additional 64-byte user-lockable, one-time
programmable (OTP) area
Erase capability
– Subsector (4-Kbyte) granularity
– Sector (64-Kbyte) granularity
– Bulk Erase (32 Mbit) in 34 s (typical)
Write protections
– Software write protection applicable to
– Hardware write protection: protected area
Deep Power-down mode: 5 μA (typical)
Electronic signature
– JEDEC standard two-byte signature
– Unique ID code (UID) with16 bytes read-
More than 100 000 write cycles per sector
More than 20 year data retention
Packages
– RoHS compliant
Automotive Certified Parts Available
every 64-Kbyte sector (volatile lock bit)
size defined by three non-volatile bits (BP0,
BP1 and BP2)
(7116h)
only, available upon customer request
serial Flash memory with 75 MHz SPI bus interface
32-Mbit, dual I/O, 4-Kbyte subsector erase,
Rev 10
TBGA24 (ZM) 6x8 mm
VFQFPN8 (MP)
SO8W (MW)
SO16 (MF)
6 × 5 mm
208 mils
300 mils
M25PX32
www.numonyx.com
1/68
1

Related parts for M25PX32-VMF6E

M25PX32-VMF6E Summary of contents

Page 1

... More than 100 000 write cycles per sector More than 20 year data retention Packages – RoHS compliant Automotive Certified Parts Available March 2009 32-Mbit, dual I/O, 4-Kbyte subsector erase, Rev 10 M25PX32 VFQFPN8 (MP) 6 × SO8W (MW) 208 mils SO16 (MF) 300 mils TBGA24 (ZM) 6x8 mm www ...

Page 2

Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Read Status Register (RDSR 6.4.1 ...

Page 4

List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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... Description The M25PX32 Mbit ( serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The M25PX32 supports two new, high-performance dual input/output instructions: Dual Output Fast Read (DOFR) instruction used to read data MHz by using • both pin DQ1 and pin DQ0 as outputs Dual Input Fast Program (DIFP) instruction used to program data MHz by • ...

Page 7

... There is an exposed central pad on the underside of the VFQFPN package. This is pulled, internally and must not be allowed to be connected to any other voltage or signal line on the PCB See section for package dimensions, and how to identify pin-1. Package mechanical V CC DQ1 M25PX32 Function M25PX32 DQ1 2 7 HOLD W ...

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... Figure 3. SO16 connections Note Don’t use. 2 See Section 11: Package Figure 4. BGA 6x8 24 ball ballout Note Connection 2 See Section 11: Package 8/68 M25PX32 HOLD DQ0 DQ1 8 9 W/V mechanical, and how to identify pin-1. mechanical. PP AI13721b ...

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Signal descriptions 2.1 Serial Data output (DQ1) This output signal is used to transfer data serially out of the device. Data are shifted out on the falling edge of Serial Clock (C). During the Dual Input Fast Program (DIFP) ...

Page 10

Write Protect/Enhanced Program supply voltage (W/V W/V is both a control input and a power supply pin. The two functions are selected by the PP voltage range applied to the pin. If the W/V input is kept in a ...

Page 11

... Serial Data output (DQ1) line at a time, the other devices are high impedance. Resistors R (represented in ensure that the M25PX32 is not selected if the Bus Master leaves the S line in the high impedance state. As the Bus Master may enter a state where all inputs/outputs are in high ...

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Example pF, that is R*C p Master never leaves the SPI bus in the high impedance state for a time period shorter than 5 μs. Figure 6. SPI modes supported CPOL CPHA ...

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Operating features 4.1 Page programming To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the ...

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Active Power, Standby Power and Deep Power-down modes When Chip Select (S) is Low, the device is selected, and in the Active Power mode. When Chip Select (S) is High, the device is deselected, but could remain in the ...

Page 15

... Protocol-related protections The environments where non-volatile memory devices are used can be very noisy. No SPI device can operate correctly in the presence of excessive noise. To help combat this, the M25PX32 features the following data protection mechanisms: Power On Reset and an internal timer (t • inadvertent changes while the power supply is outside the operating specification Program, Erase and Write Status Register instructions are checked that they consist of • ...

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Specific hardware and software protection There are two software protected modes, SPM1 and SPM2, that can be combined to protect the memory array as required. The SPM2 can be locked by hardware with the help of the W input ...

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Table 3. Protected area sizes Status Register contents bit bit 2 bit 1 bit none Upper 64th (Sector 63 Upper 32nd (two sectors: ...

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Hold condition The Hold (HOLD) signal is used to pause any serial communications with the device without resetting the clocking sequence. However, taking this signal Low does not terminate any Write Status Register, Program or Erase cycle that is ...

Page 19

Memory organization The memory is organized as: 4 194 304 bytes (8 bits each) • 1024 subsectors (4 Kbytes each) • 64 sectors (64 Kbytes each) • 16384 pages (256 bytes each) • 64 OTP bytes located outside the ...

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Table 4. Memory organization Sector Subsector 1023 63 1008 1007 62 992 991 61 976 975 60 960 959 59 944 943 58 928 927 57 912 911 56 896 895 55 880 879 54 864 863 53 848 20/68 ...

Page 21

Table 4. Memory organization (continued) Sector Subsector Address range 671 29F000h 41 656 290000h 655 28F000h 40 640 280000h 639 27F000h 39 624 270000h 623 26F000h 38 608 260000h 607 25F000h 37 592 250000h 591 24F000h 36 576 240000h 575 ...

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Table 4. Memory organization (continued) Sector Subsector 319 19 304 303 18 288 287 17 272 271 16 256 255 15 240 239 14 224 223 13 208 207 12 192 191 11 176 175 10 160 159 9 144 ...

Page 23

Instructions All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial Data input(s) DQ0 (DQ1) is (are) sampled on the first rising edge of Serial Clock (C) after Chip Select (S) ...

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Table 5. Instruction set Instruction WREN Write Enable WRDI Write Disable RDID Read Identification RDSR Read Status Register WRSR Write Status Register WRLR Write to Lock Register RDLR Read Lock Register READ Read Data Bytes Read Data Bytes at higher ...

Page 25

Write Enable (WREN) The Write Enable (WREN) instruction The Write Enable Latch (WEL) bit must be set prior to every Page Program (PP), Dual Input Fast Program (DIFP), Program OTP (POTP), Write to Lock Register (WRLR), Subsector Erase (SSE), ...

Page 26

Write Disable (WRDI) The Write Disable (WRDI) instruction The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the instruction code, and then driving Chip Select (S) High. The Write Enable Latch (WEL) bit is ...

Page 27

Read Identification (RDID) The Read Identification (RDID) instruction allows to read the device identification data: Manufacturer identification (1 byte) • Device identification (2 bytes) • A Unique ID code (UID) (17 bytes, of which 16 available upon customer request). ...

Page 28

Figure 11. Read Identification (RDID) instruction sequence and data-out sequence 28/68 ...

Page 29

Read Status Register (RDSR) The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. ...

Page 30

TB bit The Top/Bottom (TB) bit is non-volatile. It can be set and reset with the Write Status Register (WRSR) instruction provided that the Write Enable (WREN) instruction has been issued. The Top/Bottom (TB) bit is used in conjunction ...

Page 31

Write Status Register (WRSR) The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable ...

Page 32

Table 8. Protection modes W/V SRWD PP signal bit defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status Register, as shown in Table 3. ...

Page 33

Read Data Bytes (READ) The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising ...

Page 34

Read Data Bytes at higher speed (FAST_READ) The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23- A0) ...

Page 35

Dual Output Fast Read (DOFR) The Dual Output Fast Read (DOFR) instruction is very similar to the Read Data Bytes at higher speed (FAST_READ) instruction, except that the data are shifted out on two pins (pin DQ0 and pin ...

Page 36

Read Lock Register (RDLR) The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Lock Register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any location inside the concerned ...

Page 37

Read OTP (ROTP) The device is first selected by driving Chip Select (S) Low. The instruction code for the Read OTP (ROTP) instruction is followed by a 3-byte address (A23- A0) and a dummy byte. Each bit is latched ...

Page 38

Page Program (PP) The Page Program (PP) instruction allows bytes to be programmed in the memory (changing bits from 1 to 0). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the ...

Page 39

Figure 19. Page Program (PP) instruction sequence Instruction DQ0 Data byte ...

Page 40

Dual Input Fast Program (DIFP) The Dual Input Fast Program (DIFP) instruction is very similar to the Page Program (PP) instruction, except that the data are entered on two pins (pin DQ0 and pin DQ1) instead of only one. ...

Page 41

Figure 20. Dual Input Fast Program (DIFP) instruction sequence Instruction DQ0 High Impedance DQ1 ...

Page 42

Program OTP instruction (POTP) The Program OTP instruction (POTP) is used to program at most 64 bytes to the OTP memory area (by changing bits from only). Before it can be accepted, a Write Enable (WREN) ...

Page 43

Figure 21. Program OTP (POTP) instruction sequence Instruction DQ0 Data byte ...

Page 44

Write to Lock Register (WRLR) The Write to Lock Register (WRLR) instruction allows bits to be changed in the Lock Registers. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write ...

Page 45

Subsector Erase (SSE) The Subsector Erase (SSE) instruction sets to 1 (FFh) all bits inside the chosen subsector. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction ...

Page 46

Sector Erase (SE) The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction ...

Page 47

Bulk Erase (BE) The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the ...

Page 48

Deep Power-down (DP) Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It can also be used as a software protection mechanism, while the device ...

Page 49

Release from Deep Power-down (RDP) Once the device has entered the Deep Power-down mode, all instructions are ignored except the Release from Deep Power-down (RDP) instruction. Executing this instruction takes the device out of the Deep Power-down mode. The ...

Page 50

Power-up and power-down At power-up and power-down, the device must not be selected (that is Chip Select (S) must follow the voltage applied (min) at power-up, and then for a further delay of t • CC ...

Page 51

Figure 29. Power-up timing (max) Program, Erase and Write commands are rejected by the device Chip Selection not allowed V CC (min) Reset state of the device V WI Table 11. Power-up timing and V Symbol ...

Page 52

Initial delivery state The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status Register contains 00h (all Status Register bits are 0). 9 Maximum rating Stressing the device ...

Page 53

DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the ...

Page 54

Table 16. Capacitance Symbol C Input/output capacitance (DQ0/DQ1) IN/OUT C Input capacitance (other pins Sampled only, not 100% tested Table 17. DC characteristics Symbol Parameter I Input leakage current LI I Output leakage current LO I ...

Page 55

Table 18. AC characteristics Test conditions specified in Symbol Alt. Parameter Clock frequency for the following instructions: DOFR, DIFP, FAST_READ SSE, SE, BE, DP, WREN, WRDI, RDID RDSR, WRSR, ROTP, PP, POTP, WRLR, RDLR, RDP f ...

Page 56

Table 18. AC characteristics (continued) Symbol Alt. t Write Status Register cycle time W Page Program cycle time (256 bytes) (7) t Page Program cycle time (n bytes) PP Program OTP cycle time (64 bytes) t Subsector Erase cycle time ...

Page 57

Figure 32. Write Protect Setup and Hold timing during WRSR when SRWD=1 W/V PP tWHSL S C DQ0 High Impedance DQ1 Figure 33. Hold timing S C DQ1 DQ0 HOLD tHLCH tCHHL tCHHH tHLQZ tHHQX tSHWL AI07439c tHHCH AI13746 57/68 ...

Page 58

Figure 34. Output timing S C tCLQV tCLQX tCLQX DQ1 ADDR. DQ0 LSB IN Figure 35. V PPH S C DQ0 V PPH V PP 58/68 tCLQV timing tVPPHSL tCH tCL LSB OUT tQLQH tQHQL End of command (identi ed ...

Page 59

... Package mechanical In order to meet environmental requirements, Numonyx offers these devices in RoHS packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 60

Table 19. VFQFPN8 (MLP8) 8-lead very thin fine pitch dual flat package no lead, 6 × 5 mm, package mechanical data Symbol Typ A 0. 0.65 A3 0.20 b 0.40 D 6.00 D1 5.75 D2 3.40 E 5.00 ...

Page 61

Figure 37. SO8W 8-lead plastic small outline, 208 mils body width, package outline Drawing is not to scale. Table 20. SO8W 8-lead plastic small outline, 208 mils body width, package mechanical data Millimeters Symbol ...

Page 62

Figure 38. SO16 wide - 16-lead plastic small outline, 300 mils body width, package outline SO-H 1. Drawing is not to scale. Table 21. SO16 wide - 16-lead plastic small outline, 300 mils body width, mechanical data Symbol Typ A ...

Page 63

Figure 39. TBGA, 6x8 mm, 24 ball package outline 63/68 ...

Page 64

Table 22. TBGA 6x8 mm 24-ball package dimensions MIN A A1 0.20 A2 Øb 0. balls aaa bbb ddd eee fff Control unit: mm ...

Page 65

... F = Tape and reel packing RoHS compliant Lithography B = 110nm, Fab.2 Diffusion Plant blank = 110 nm Automotive Grade ( Automotive –40 to 125 °C Part. Device tested with high reliability certified flow. blank = standard – °C device 1. Secure options are available upon customer request. M25PX32 – 65/68 ...

Page 66

... Numonyx strongly recommends the use of the Automotive Grade devices(AutoGrade 6 and Grade 3) for use in an automotive environment. The High Reliability Certified Flow (HRCF) is described in the quality note QNEE9801. Note: For a list of available options (speed, package, etc.) or for further information on any aspect of this device, please contact your nearest Numonyx Sales Office. ...

Page 67

... Section 6.3: Read Identification (RDID) Modified the minimum value for t SHSL Minor text changes. Applied Numonyx branding. Corrected bulk erase specifications on the cover page; Added the following information regarding bulk erase: Avoid applying VPPH to the W/VPP pin during Bulk Erase. Added the TBGA package and accompanying informaiton. ...

Page 68

... NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems nuclear facility Numonyx may make changes to specifications and product descriptions at any time, without notice. ...

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