M29F800FB5AN6E2 NUMONYX, M29F800FB5AN6E2 Datasheet - Page 32

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M29F800FB5AN6E2

Manufacturer Part Number
M29F800FB5AN6E2
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M29F800FB5AN6E2

Cell Type
NOR
Density
8Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
20/19Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29F800FB5AN6E2
Manufacturer:
MICRON
Quantity:
1 000
Part Number:
M29F800FB5AN6E2
Manufacturer:
ST
0
Part Number:
M29F800FB5AN6E2
Manufacturer:
MICRON/镁光
Quantity:
20 000
Part Number:
M29F800FB5AN6E2
0
Table 6.
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
Block Erase and Erase Suspend Latency parameters: Maximum value measured at worst case conditions for both temperature
Table 7.
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
32/67
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
tested.
and V
and V
tested.
and V
and V
CC
CC
CC
CC
.
.
after 100,000 program/erase cycles.
after 100,000 program/erase cycles.
Program/Erase Times and Program/Erase Endurance Cycles, M29F160F
Program/Erase Times and Program/Erase Endurance Cycles, M29F800F
Parameter
Parameter
100,000
20
100,000
20
Min
Min
25
0.8
20
11
24
12
12
0.8
20
11
12
6
Typical
Typical
120
6
25
200
120
60
60
6
25
200
30
Max
Max
s
s
µs
µs
s
s
cycles
years
s
s
µs
µs
s
s
cycles
years
Unit
Unit

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