M29W640GB70NA6F NUMONYX, M29W640GB70NA6F Datasheet - Page 17

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M29W640GB70NA6F

Manufacturer Part Number
M29W640GB70NA6F
Description
Manufacturer
NUMONYX
Datasheet

Specifications of M29W640GB70NA6F

Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W640GB70NA6F
Manufacturer:
ST
0
2.9
2.10
2.11
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a hardware reset to the
memory or to temporarily unprotect all blocks that have been protected.
Note that if V
M29W640GL, respectively, and the last two and first two blocks in the M29W640GT and
M29W640GB, respectively, will remain protected even if RP is at V
A hardware reset is achieved by holding Reset/Block Temporary Unprotect Low, V
least t
ready for bus read and bus write operations after t
the
characteristics
details.
Holding RP at V
and erase operations on all blocks will be possible. The transition from V
slower than t
Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a program or erase operation. During program or erase operations Ready/Busy
is Low, V
suspend mode.
After a hardware reset, bus read and bus write operations cannot begin until Ready/Busy
becomes high-impedance. See
characteristics
details.
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
Byte/Word Organization Select (BYTE)
The Byte/Word Organization Select pin is used to switch between the x8 and x16 bus
modes of the memory. When Byte/Word Organization Select is Low, V
x8 mode, when it is High, V
Section 2.10: Ready/Busy Output
PLPX
OL
. After Reset/Block Temporary Unprotect goes High, V
. Ready/Busy is high-impedance during read mode, auto select mode and erase
PHPHH
PP
and
and
/WP is at V
ID
will temporarily unprotect the protected blocks in the memory. Program
.
Figure 17: Reset/Block Temporary Unprotect AC
Figure 17: Reset/Block Temporary Unprotect AC
IL
IH
, then the last and the first block in the M29W640GH and
, the memory is in x16 mode.
Table 20: Reset/Block Temporary Unprotect AC
(RB),
Table 20: Reset/Block Temporary Unprotect AC
PHEL
or t
RHEL
, whichever occurs last. See
IH
, the memory will be
ID
.
waveforms, for more
waveforms, for more
IL
, the memory is in
IH
to V
ID
must be
IL
, for at
17/90

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