NAND512W3A2DN6F NUMONYX, NAND512W3A2DN6F Datasheet - Page 23

• Manufacturer Part Number: NAND512W3A2DN6F
• Manufacturer: NUMONYX

Specifications of NAND512W3A2DN6F

• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Compliant

NAND512xxA2D, NAND01GxxA2C
Figure 9.
Figure 10. Sequential row read block diagrams
Figure 11. Read block diagrams
1. Highest address depends on device density.
A9-A26 (1)
A9-A26 (1)
A0-A7
A0-A7
RB
I/O
Block
Block
Sequential row read operations
Read B command, x8 devices
(1st half Page)
(1st half Page)
Read B command, x8 devices
Command
Read A command, x8 devices
Read A command, x8 devices
01h/ 50h
(1st half page)
(1st half page)
code
00h/
Area A
Area A
Area A
Area A
Address inputs
(Read busy time)
(2nd half Page)
(2nd half Page)
(2nd half page)
(2nd half page)
Area B
Area B
tBLBH1
Area B
Area B
(Spare)
(Spare)
Area C
Area C
Busy
Area C
(spare)
Area C
(spare)
1st page
1st page
2nd page
Nth page
2nd page
Nth page
page output
1st
A0-A2 (x 16)
tBLBH1
A9-A26 (1)
A0-A3 (x 8)
A9-A26 (1)
Block
Block
A0-A7
Busy
Read C command, x8/x16 devices
Read A command, x16 devices
A4-A7 (x 8), A3-A7 (x 16) are don't care
Read C command, x8/x16 devices
Read A command, x16 devices
Area A
page output
Area A
(main area)
2nd
tBLBH1
Area A
(main area)
Area A/ B
Area A
Busy
Area A/ B
(Spare)
Area C
(Spare)
Area C
page output
Device operations
Area C
(spare)
Nth
1st page
Area C
(spare)
2nd page
Nth page
1st page
Nth page
2nd page
ai07597
AI07598
AI07596
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