UPD23C16380GZ-XXX-MJH Renesas Electronics America, UPD23C16380GZ-XXX-MJH Datasheet

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UPD23C16380GZ-XXX-MJH

Manufacturer Part Number
UPD23C16380GZ-XXX-MJH
Description
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPD23C16380GZ-XXX-MJH

Lead Free Status / RoHS Status
Supplier Unconfirmed
Document No. M15709EJ2V0DS00 (2nd edition)
Date Published February 2003 NS CP(K)
Printed in Japan
Description
selectable (BYTE mode : 2,097,152 words by 8 bits, WORD mode : 1,048,576 words by 16 bits).
Features
• Pin compatible with NOR Flash Memory
• Word organization
• Page access mode
• Operating supply voltage : V
The µ PD23C16340 and µ PD23C16380 are 16,777,216 bits mask-programmable ROM. The word organization is
The active levels of OE (Output Enable Input) can be selected with mask-option.
The µ PD23C16340 and µ PD23C16380 are packed in 48-pin PLASTIC TSOP(I) and 48-pin TAPE FBGA.
BYTE mode : 8 byte random page access ( µ PD23C16340)
WORD mode : 4 word random page access ( µ PD23C16340)
2,097,152 words by 8 bits (BYTE mode)
1,048,576 words by 16 bits (WORD mode)
Operating supply
2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
3.0 V ± 0.3 V
3.3 V ± 0.3 V
voltage
V
CC
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
16 byte random page access ( µ PD23C16380)
8 word random page access ( µ PD23C16380)
Page access time
16M-BIT MASK-PROGRAMMABLE ROM
CC
Access time /
ns (MAX.)
= 2.7 V to 3.6 V
90 / 25
85 / 25
The mark
µ µ µ µ PD23C16340, 23C16380
PAGE ACCESS MODE
DATA SHEET
shows major revised points.
µ PD23C16340
Power supply current (Active mode)
40
mA (MAX.)
MOS INTEGRATED CIRCUIT
µ PD23C16380
55
(CMOS level input)
Standby current
µ A (MAX.)
30
2001

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UPD23C16380GZ-XXX-MJH Summary of contents

Page 1

MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) Description The µ PD23C16340 and µ PD23C16380 are 16,777,216 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 2,097,152 words by 8 bits, WORD ...

Page 2

Ordering Information Part Number µ PD23C16340GZ-xxx-MJH 48-pin PLASTIC TSOP(I) (12 x 20) (Normal bent) µ PD23C16340F9-xxx-BC3 48-pin TAPE FBGA ( µ PD23C16380GZ-xxx-MJH 48-pin PLASTIC TSOP(I) (12 x 20) (Normal bent) µ PD23C16380F9-xxx-BC3 48-pin TAPE FBGA ( ...

Page 3

Pin Configurations /xxx indicates active low signal. 48-pin PLASTIC TSOP(I) (12 x 20) (Normal bent) A15 1 A14 2 A13 3 A12 4 A11 5 A10 A19 ...

Page 4

Top View A13 A12 A14 A15 A16 WORD, /BYTE A10 A11 A19 A18 ...

Page 5

Input / Output Pin Functions Pin name Input / Output WORD, /BYTE Input A0 to A19 Input (Address inputs O7 O14 Output (Data outputs) O15, A−1 Output, Input (Data output 15, LSB Address input) /CE Input ...

Page 6

Block Diagram A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 6 µ µ µ µ PD23C16340, 23C16380 O8 O9 O10 O11 O12 O13 O14 ...

Page 7

Mask Option The active levels of output enable pin (/ DC) are mask programmable and optional, and can be selected from among " 0 " " 1 " " x " shown in the table below. Option ...

Page 8

Electrical Specifications Absolute Maximum Ratings Parameter Symbol Supply voltage V CC Input voltage V I Output voltage V O Operating ambient temperature T A Storage temperature T stg Caution Exposing the device to stress above those listed in Absolute Maximum ...

Page 9

AC Characteristics (T = –10 to +70 ° Parameter Symbol Address access time t ACC Page access time t PAC Address skew time t SKEW Chip enable access time t CE Output enable access time t OE Output ...

Page 10

Cautions on power application To ensure normal operation, always apply power using /CE following the procedure shown below. 1) Input a high level to /CE during and after power application. 2) Hold the high level input to /CE for 200 ...

Page 11

Read Cycle Timing Chart A19, (Input) Note1 A−1 t ACC /CE (Input / (Input High O7, (Input) Note3 O8 to O15 Notes 1. During WORD mode, A–1 is O15. ...

Page 12

Read Cycle Timing Chart 2 (Page Access Mode) Note 1 Upper address (Input A19 A3 to A19 /CE (Input) / (Input) Note 1 Page address Note 2 (Input) A–1 , A0, A1 Note 2 A–1 , ...

Page 13

WORD, /BYTE Switch Timing Chart High-Z A–1 (Input) WORD, /BYTE (Input (Output) Data Out O8 to O15 (Output) Data Out Remark Chip Enable (/CE) and Output Enable (/OE or OE) : Active. µ µ µ µ PD23C16340, ...

Page 14

Package Drawings 48-PIN PLASTIC TSOP (I) (12x20 NOTES 1) Each lead centerline is located within 0. its true position (T.P.) at maximum material condition. 2) "A" excludes mold flash. (Includes mold flash : ...

Page 15

TAPE FBGA(8x6) E INDEX MARK φ φ µ µ µ µ PD23C16340, 23C16380 Data Sheet ...

Page 16

Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the µ PD23C16340 and µ PD23C16380. Types of Surface Mount Device µ PD23C16340GZ-MJH : 48-pin PLASTIC TSOP(I) (12 x 20) (Normal bent) µ PD23C16340F9-BC3 : 48-pin TAPE ...

Page 17

Revision History Edition/ Page Date This Previous revision edition edition 2nd edition/ Throughout Throughout Modification Feb. 2003 p.9 p.9 Addition p.10 – Addition p.11 p.10 Modification p.15 p.14 Modification µ µ µ µ PD23C16340, 23C16380 Type of Location AC Characteristics ...

Page 18

PD23C16340, 23C16380 Data Sheet M15709EJ2V0DS ...

Page 19

NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation ...

Page 20

These commodities, technology or software, must be exported in accordance with the export administration regulations of the exporting country. Diversion contrary to the law of that country is prohibited. • The information in this document is current as of February, ...

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