R1WV3216RBG-7SI#B0 Renesas Electronics America, R1WV3216RBG-7SI#B0 Datasheet - Page 3

• Manufacturer Part Number: R1WV3216RBG-7SI#B0
• Manufacturer: Renesas Electronics America

Specifications of R1WV3216RBG-7SI#B0

• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

REJ03C0215-0300Z Rev.3.00 2008.03.03
page 1 of 15
R1W V3216R Series
32Mb Advanced LPSRAM (2M wordx16bit)
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
battery backup are the important design objectives.
LPSRAMs are assembled in one package.
10.49mm with the pin-pitch of 0.4mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch
of 0.75mm and 6x8 array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring
pattern of printed circuit boards.
The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit,
The R1WV3216R Series is suitable for memory applications where a simple interfacing , battery operating and
The R1WV3216R Series is made by stacked-micro-package technology and two chips of 16Mbit Advanced
The R1WV3216R Series is packaged in a 52pin micro thin small outline mount device[
• Single 2.7-3.6V power supply
• Small stand-by current:4
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible.
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
µ
A (3.0V, typ.)
Description
Features
µ
TSOP / 10.79mm x
REJ03C0215-0300Z
2008.03.03
Rev.3.00