M48T35AV-10MH6TR STMicroelectronics, M48T35AV-10MH6TR Datasheet - Page 17

• Manufacturer Part Number: M48T35AV-10MH6TR
• Manufacturer: STMicroelectronics
• Type: NVSRAMr

Specifications of M48T35AV-10MH6TR

• Word Size: 8b
• Organization: 32Kx8
• Density: 256Kb
• Interface Type: Parallel
• Access Time (max): 100ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: SOH
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: -40C to 85C
• Pin Count: 28
• Mounting: Surface Mount
• Supply Current: 30mA
• Lead Free Status / RoHS Status: Not Compliant

M48T35AV
3.6
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1 µF (as shown in
Figure
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 11. Supply voltage protection
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
11) is recommended in order to provide the needed filtering.
CC
to V
SS
V CC
Doc ID 6845 Rev 8
(cathode connected to V
0.1µF
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
CC
DEVICE
CC
, anode to V
bus. The energy stored in the
SS
SS
Clock operations
by as much as
). Schottky diode
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