STK16C88-3WF45 Cypress Semiconductor Corp, STK16C88-3WF45 Datasheet
STK16C88-3WF45
Specifications of STK16C88-3WF45
Related parts for STK16C88-3WF45
STK16C88-3WF45 Summary of contents
Page 1
... Document Number: 001-50594 Rev. *B 256 Kbit (32K x 8) AutoStore+ nvSRAM Functional Description The Cypress STK16C88 256Kb fast static RAM with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The ...
Page 2
... Capacitance ......................................................................... 8 Thermal Resistance ............................................................. 8 AC Test Conditions ............................................................. 8 AC Switching Characteristics ............................................ 9 SRAM Read Cycle ......................................................... 9 Switching Waveforms ......................................................... 9 AutoStorePlus or Power Up RECALL .............................. 11 Software Controlled STORE/RECALL Cycle ................... 12 Part Numbering Nomenclature ......................................... 13 Ordering Information ......................................................... 13 Package Diagrams ............................................................. 14 Sales, Solutions and Legal Information .......................... 15 Worldwide Sales and Design Support.......................... 15 Products ....................................................................... 15 STK16C88-3 Page ...
Page 3
... Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the chip. Output Enable, Active LOW. The active LOW OE input enables the data output buffers during read cycles. Deasserting OE HIGH causes the I/O pins to tristate. Ground for the Device. The device is connected to ground of the system. STK16C88-3 Description Page ...
Page 4
... V CC RECALL cycle is automatically initiated and takes t complete. Document Number: 001-50594 Rev the STK16C88 WRITE state at the end of power up RECALL, the SRAM data is corrupted. To help avoid this situation Kohm resistor is connected either between WE and system V or between CE and system V ...
Page 5
... When V <V , all externally initiated STORE CAP SWITCH operations and SRAM WRITEs are inhibited. Noise Considerations The STK16C88 high speed memory. It must have a high frequency bypass capacitor of approximately 0.1 µF connected between V and V using leads and traces that are as short CC SS, as possible ...
Page 6
... L H Notes 1. The six consecutive addresses must be in the order listed. WE must be high during all six consecutive CE controlled cycles to enable a nonvolatile cycle. 2. While there are 15 addresses on the STK16C88-3, only the lower 14 are used to control software modes. Document Number: 001-50594 Rev – A ...
Page 7
... All others V < 0.2V or > Max, V < V < Max, V < V < > –4 mA OUT OUT Description STK16C88-3 ...................................–0.5V to Vcc + 0.5V 0-7 Ambient Temperature V CC 0C to +70C 3.0V to 3.6V -40C to +85C 3.0V to 3.6V Min Max Commercial 50 Industrial Commercial 18 Industrial 19 – 0.2V < V ...
Page 8
... MHz 3 [4] Test Conditions Test conditions follow standard test methods and proce- dures for measuring thermal impedance, per EIA / JESD51. Figure 4. AC Test Loads R1 317 3. STK16C88-3 Max 5 7 28-PDIP TBD TBD R2 351 Unit pF pF Unit C/W C/W ...
Page 9
... Address Access Time Output Enable to Data Valid Output Hold After Address Change Chip Enable to Output Active Chip Disable to Output Inactive Output Enable to Output Active Output Disable to Output Inactive Chip Enable to Power Active Chip Disable to Power Standby ; device is continuously selected. IH STK16C88 Unit Min Max ...
Page 10
... Write Enable to Output Disable Output Active After End of Write Figure 7. SRAM Write Cycle 1: WE Controlled SCE PWE t SD DATA VALID t HZWE HIGH IMPEDANCE Figure 8. SRAM Write Cycle 2: CE Controlled SCE PWE t SD DATA VALID HIGH IMPEDANCE STK16C88 Unit Min Max [ LZWE ...
Page 11
... HRECALL CC Document Number: 001-50594 Rev. *B Description Power up RECALL Duration STORE Cycle Duration Power-down AutoStore Slew Time to Ground Low Voltage Reset Level Low Voltage Trigger Level Figure 9. AutoStorePlus/Power Up RECALL . SWITCH STK16C88-3 STK16C88-3 Unit Min Max s 550 10 ms 500 ns 2.4 V 2.7 2.95 ...
Page 12
... The six consecutive addresses must be read in the order listed in the Mode Selection table. WE must be HIGH during all six consecutive cycles. Document Number: 001-50594 Rev. *B [11, 12] Description STORE/RECALL Initiation Cycle Time Address Setup Time Clock Pulse Width Address Hold Time RECALL Duration # 1 A STK16C88 Min Max [12 ...
Page 13
... Part Numbering Nomenclature STK16C88 - Ordering Information These parts are not recommended for new designs. They are in production to support ongoing production programs only. Speed (ns) Ordering Code 35 STK16C88-3WF35I All parts are Pb-free. The above table contains Final information. Please contact your local Cypress sales representative for availability of these parts Document Number: 001-50594 Rev ...
Page 14
... Package Diagram Document Number: 001-50594 Rev. *B Figure 11. 28-Pin (600 Mil) PDIP (51-85017) STK16C88-3 51-85017 *D Page ...
Page 15
... Document History Page Document Title: STK16C88-3 256 Kbit (32K x 8) AutoStore+ nvSRAM Document Number: 001-50594 Orig. of Rev. ECN No. Change ** 2625096 GVCH/PYRS *A 2826441 GVCH *B 2909328 GVCH Sales, Solutions and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress ...