CY7C199-45LMB Cypress Semiconductor Corp, CY7C199-45LMB Datasheet - Page 4

• Manufacturer Part Number: CY7C199-45LMB
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C199-45LMB

• Density: 256Kb
• Access Time (max): 45ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 15b
• Package Type: LLCC
• Operating Temp Range: -55C to 125C
• Number Of Ports: 1
• Supply Current: 150mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 28
• Word Size: 8b
• Number Of Words: 32K
• Lead Free Status / RoHS Status: Not Compliant

Document #: 38-05160 Rev. *B
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate a
11. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,
8. At any given temperature and voltage condition, t
9. t
Parameter
input pulse levels of 0 to 3.0V, and output loading of the specified I
write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
HZOE
, t
HZCE
, and t
[10, 11]
HZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
CE LOW to Low-Z
CE HIGH to High-Z
CE LOW to Power-up
CE HIGH to Power-down
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE LOW to High-Z
WE HIGH to Low-Z
are specified with C
Description
Over the Operating Range
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
[8]
[8]
[8, 9]
[9]
[8]
[8, 9]
HZCE
is less than t
LZCE
OL
/I
OH
, t
HZOE
and 30-pF load capacitance.
[3,7]
Min.
is less than t
12
12
3
0
3
0
9
9
0
0
8
8
0
3
-12
HZWE
Max.
LZOE
12
12
12
5
5
5
7
and t
, and t
SD
.
HZWE
Min.
15
15
10
10
3
0
3
0
0
0
9
9
0
3
is less than t
-15
Max.
15
15
15
7
7
7
7
LZWE
for any given device.
Min.
20
20
15
15
15
10
3
0
3
0
0
0
0
3
-20
Max.
CY7C199
20
20
20
10
9
9
9
Page 4 of 11
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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