TFDU6101E-TR3 Vishay, TFDU6101E-TR3 Datasheet - Page 6

• Manufacturer Part Number: TFDU6101E-TR3
• Manufacturer: Vishay
• Type: TX/RXr

Specifications of TFDU6101E-TR3

• Peak Wavelength: 900nm
• Angle Of Half Sensitivity: 48°
• Pulse Width: 10us
• Led Supply Voltage: -0.5 to 6V
• Package Type: SMD
• Fall Time: 40ns
• Rise Time: 40ns
• Dimensions: 9.7x4.7x4
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (min): 2.6V
• Operating Supply Voltage (max): 5.5V
• Mounting: Surface Mount
• Pin Count: 8
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Data Rate: 3.90625Mbps
• Lead Free Status / RoHS Status: Compliant

Optoelectronic Characteristics
T
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TFDU6101E/TFDS6401/TFDS6501E/TFDT6501E
Vishay Semiconductors
6 (17)
www.vishay.com
Receiver
Minimum Detection
Threshold Irradiance,
SIR Mode
SIR Mode
Minimum Detection
Threshold Irradiance,
MIR Mode
MIR Mode
Minimum Detection
Threshold Irradiance,
FIR Mode
FIR Mode
Maximum Detection
Threshold Irradiance
Logic LOW Receiver
Input Irradiance
Rise Time of Output
Signal––,,,,klll
Fall Time of Output
Signal
Rxd Pulse Width of
Rxd Pulse Width of
Output Signal, 50%
SIR Mode
Rxd Pulse Width of
Output Signal, 50%
MIR Mode
Rxd Pulse Width of
Output Signal 50%
Output Signal, 50%
FIR Mode
Stochastic Jitter,
Leading Edge,
FIR Mode
Latency
amb
= 25 C, V
Parameters
CC
= 2.6 V to 5.5 V unless otherwise noted.
TFDS6501E/ TFDT6501E
9.6 kbit/s to 115.2 kbit/s
TFDU6101E, TFDS6401
9.6 kbit/s to 115.2 kbit/s
TFDS6501E/ TFDT6501E
1.152 Mbit/s
TFDU6101E, TFDS6401
1.152 Mbit/s
TFDS6501E/ TFDT6501E
4.0 Mbit/s
TFDU6101E, TFDS6401
4.0 Mbit/s
10% to 90%, @2.2 k , 15 pF
90% to 10%, @2.2 k , 15 pF
Input pulse length 20 s, 9.6 kbit/s
Input pulse length 1.41 s,
115.2 kbit/s
Input pulse length 217 ns,
1.152 Mbit/s
Input pulse length 125 ns, 4.0 Mbit/s
Input pulse length 250 ns, 4.0 Mbit/s
Input Irradiance = 100 mW/m
4.0 Mbit/s
= 850 nm to 900 nm
= 850 nm to 900 nm
= 850 nm to 900 nm
= 850 nm to 900 nm
= 850 nm to 900 nm
= 850 nm to 900 nm
= 850 nm to 900 nm
Test Conditions
2
,
Symbol
t
t
r (Rxd)
f (Rxd)
t
t
t
t
t
E
E
E
E
E
E
E
E
PW
PW
PW
PW
PW
t
L
e
e
e
e
e
e
e
e
Min.
110
100
200
1.2
1.2
10
10
5
4
Typ.
120
20
25
50
65
65
85
10
10
10
Document Number 82525
Rev. B1.6, 02–Nov–00
1/2 bit
length
Max.
100
100
260
160
290
300
35
40
40
40
20
mW/m
mW/m
mW/m
mW/m
mW/m
mW/m
mW/m
kW/m
Unit
ns
ns
ns
ns
ns
ns
s
s
s
2
2
2
2
2
2
2
2