01/14/2011
DESCRIPTION
A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a
hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage ....................................................................................................................................................... 1 kV
Emitter-Collector Voltage ......................................................................................................................................................... 7 V
Collector-Emitter Voltage ....................................................................................................................................................... 40 V
Collector-Base Voltage .......................................................................................................................................................... 45 V
Reverse Input Voltage ............................................................................................................................................................ 2 V
Input Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (Note 1) ........................................... 40mA
Peak Forward Input Current (Value applies for tw 1 s PRR 300 pps) ............................................................................. 1 A
Continuous Collector Current ............................................................................................................................................. 50 mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (Note 2) ...................................... 300 mW
Storage Temperature .......................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................ -55°C to +125°C
Lead Solder Temperature (10 seconds max., 1/16” from case) ........................................................................................ 240°C
Notes:
1.
2.
Ø0.335 [8.51]
Ø0.305 [7.75]
Features:
4N22
4N23
4N24
Derate linearly to 125°C free-air temperature at the rate of 0.40 mA/°C above 65°C.
Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C above 65°C.
JEDEC registered data
0.500 [12.70] MIN
Qualified to MIL-PRF-19500/486
Collector in electrical contact with case
Overall current gain: 1.5 typical (4N24)
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
±1 kV electrical isolation
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION 725 E.Walnut St., Garland, TX 75040 (972)272-3571 Fax (972)487-6918
0.185 [4.70]
0.155 [3.94]
JAN, JANTX, JANTXV, AND JANS SINGLE CHANNEL OPTOCOUPLERS
ALL LINEAR DIMENSIONS ARE IN INCHES [MILLIMETERS].
0.040 [1.02] MAX
Package Dimensions
Ø0.370 [9.40]
Ø0.336 [8.53]
www.micropac.com
0.034 [0.86]
0.028 [0.71]
Ø0.019 [0.48]
Ø0.016 [0.41]
Ø0.200 [5.08]
6 LEADS
45°
7
E-MAIL: OPTOSALES @ MICROPAC.COM
6
1
5
Applications:
2
3
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
0.045 [1.14]
0.029 [0.73]
A 5
K 7
Schematic Diagram
OPTOELECTRONIC PRODUCTS
COLLECTOR IS COMMON TO CASE.
DIVISION
3 C
1 E
2 B