SPL DL90_3 OSRAM Opto Semiconductors Inc, SPL DL90_3 Datasheet

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SPL DL90_3

Manufacturer Part Number
SPL DL90_3
Description
Laser Diodes Nanostack 75W, 905nm 75 W, 905 nm
Manufacturer
OSRAM Opto Semiconductors Inc
Datasheet

Specifications of SPL DL90_3

Beam Divergence Perpendicular
30°
Lead Free Status / RoHS Status
Compliant
Other names
Q65110A2591
Nanostack Impuls-Laserdiode
Nanostack Pulsed Laser Diode
Lead (Pb) Free Product - RoHS Compliant
SPL DL90_3
Besondere Merkmale
• Zuverlässiges InGaAs/GaAs kompressiv
• Hochleistungslaser mit „Large-Optical-Cavity“
• Nanostack Lasertechnologie beinhaltet
• Laterale Austrittsöffnung 200 µm × 10 µm
Anwendungen
• Entfernungsmessung
• Sicherheit, Überwachung
• Beleuchtung, Zündung
• Test- und Messsysteme
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte,
Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits-
richtlinien der IEC-Norm 60825-1 behandelt
werden.
Typ
Type
SPL DL90_3
2009-03-24
verspanntes Halbleiter-Material
(LOC) Struktur für ein schmales Fernfeld
mehrere epitaktisch integrierte Emitter
nicht
Anzahl vertikal
angeordneter Emitter
Number of vertically
stacked Emitters
3
sichtbare
Infrarot-
1
Wellenlänge
Wavelength
903 nm
Features
• Reliable strained InGaAs/GaAs material
• High power large-optical-cavity structure
• Nanostack laser technology including multiple
• Laser aperture 200 µm × 10 µm
Applications
• Range finding
• Security, surveillance
• Illumination, ignition
• Test and measurement systems
Safety Advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 “Safety of laser products”
epitaxially stacked emitters
Bestellnummer
Ordering Code
Q65110A2591

Related parts for SPL DL90_3

SPL DL90_3 Summary of contents

Page 1

... IEC-Norm 60825-1 behandelt werden. Typ Anzahl vertikal angeordneter Emitter Type Number of vertically stacked Emitters SPL DL90_3 3 2009-03-24 Features • Reliable strained InGaAs/GaAs material • High power large-optical-cavity structure • Nanostack laser technology including multiple epitaxially stacked emitters • Laser aperture 200 µm × 10 µm Applications • ...

Page 2

... For exemplary characteristicals of laser operation in plastic package see datasheet of SPL PL90_3. 2009-03-24 1) Symbol Symbol λ pulse I th η d × θ ⊥ θ SPL DL90_3 Werte Values min. typ. max. 896 903 910 - 700 850 3.2 3.5 - 200 × 10 – – – – 380 460 100 150 ...

Page 3

... Maße werden wie folgt angegeben: mm (inch) Dimensions are specified as follows: mm (inch). Wire Bonding Scheme Bond area 0.13 0.34 2009-03-24 Emitting area 0.6 OHF02454 Schematic of Chip and Equivalent Circuit OHF02455 3 SPL DL90_3 p-contact n-contact OHF02453 p-contact TM Nanostack p-contact n-contact Equivalent Circuit OHF02478 ...

Page 4

... Life support devices or systems are intended ( implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail reasonable to assume that the health of the user may be endangered. 2009-03-24 2 with the express written approval of OSRAM OS. 4 SPL DL90_3 ...

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