BAP1321-04 T/R NXP Semiconductors, BAP1321-04 T/R Datasheet - Page 3

• Manufacturer Part Number: BAP1321-04 T/R
• Description: PIN Diodes TAPE7 DIO.RFSS
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP1321-04 T/R

• Configuration: Dual Series
• Power Dissipation: 250mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SOT-23
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: SHF
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 0.5 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.325 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.3 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 5 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Compliant
• Other names: BAP1321-04,215

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2001 Apr 17
Per diode
V
I
C
r
s
s
s
s
s

L
R
SYMBOL
SYMBOL
j
R
D
L
S
= 25 C unless otherwise specified.
F
21
21
21
21
21
Silicon PIN diode
d
th j-s





2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
I
V
V
V
V
f = 100 MHz; note 1
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
R
I
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
R
R
R
R
R
R
L
= 50 mA
I
I
I
I
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
F
F
F
F
= 100 ; measured at I
= 60 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
3
CONDITIONS
F
= 10 mA to I
R
= 3 mA
R
= 6 mA;
0.95

0.42
0.375
0.275
3.4
2.4
1.2
0.85
15.7
10.5
7.9
0.27
0.35
0.43
0.21
0.29
0.37
0.14
0.21
0.29
0.10
0.18
0.26
0.5
1.4
TYP.
VALUE
BAP1321-04
220
Product specification
1.1
100

0.45
0.325
5.0
3.6
1.8
1.3

















MAX.
UNIT
K/W
V
nA
pF
pF
pF




dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
nH
UNIT