HFA04SD60SPBF Vishay, HFA04SD60SPBF Datasheet

FAST DIODE, 4A, 600V, TO-220AC

HFA04SD60SPBF

Manufacturer Part Number
HFA04SD60SPBF
Description
FAST DIODE, 4A, 600V, TO-220AC
Manufacturer
Vishay

Specifications of HFA04SD60SPBF

Rectifier Type
Switching Diode
Configuration
Single
Peak Rep Rev Volt
600V
Avg. Forward Curr (max)
4
Rev Curr
3uA
Peak Non-repetitive Surge Current (max)
25A
Forward Voltage
2.2@8AV
Operating Temp Range
-55C to 150C
Package Type
DPAK
Rev Recov Time
42ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
4A
Forward Voltage Vf Max
2.2V
Reverse Recovery Time Trr Max
42ns
Forward Surge Current Ifsm Max
25A
Diode Type
Fast Recovery
Product
Ultra Fast Recovery Rectifier
Reverse Voltage
600 V
Forward Voltage Drop
2.2 V at 8 A
Recovery Time
42 ns
Forward Continuous Current
4 A
Max Surge Current
25 A
Reverse Current Ir
3 uA
Mounting Style
SMD/SMT
Package / Case
DPAK
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94034
Revision: 29-Jul-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Repetitive peak forward current
Maximum power dissipation
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
See fig. 1
Maximum reverse
leakage current
Junction capacitance
Series inductance
V
F
T
at 4 A at 25 °C
J
t
rr
(maximum)
(typical)
I
F(AV)
V
R
D-PAK
SYMBOL
V
Ultrafast Soft Recovery Diode, 4 A
V
C
V
L
I
BR
R
R
S
F
T
,
N/C
1
For technical questions, contact: diodes-tech@vishay.com
I
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
R
F
F
F
J
R
R
150 °C
2
= 4 A
= 8 A
= 4 A, T
600 V
= 100 µA
17 ns
1.8 V
= 125 °C, V
= V
= 200 V
Anode
4 A
R
3
J
rated
= 25 °C unless otherwise specified)
J
SYMBOL
T
= 125 °C
V
I
J
I
I
F(AV)
TEST CONDITIONS
FSM
FRM
P
, T
HEXFRED
RRM
R
D
= 0.8 x V
Stg
T
T
T
R
C
C
C
rated
TEST CONDITIONS
= 100 °C
= 116 °C
= 100 °C
FEATURES
• Ultrafast recovery time
• Ultrasoft recovery
• Very low I
• Very low Q
• Guaranteed avalanche
• Specified at operating temperature
• Lead (Pb)-free
• Designed and qualified for Q101 level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems. The softness
of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
freewheeling, flyback, power converters, motor drives, and
other applications where high speed and reduced switching
losses are design requirements.
®
RRM
rr
Vishay High Power Products
MIN.
600
-
-
-
-
-
-
-
- 55 to 150
VALUES
HFA04SD60SPbF
600
25
16
10
4
TYP.
0.17
1.5
1.8
1.4
8.0
44
4
-
MAX.
300
1.8
2.2
1.7
3.0
8
-
-
www.vishay.com
UNITS
°C
W
V
A
RoHS*
COMPLIANT
UNITS
µA
nH
pF
V
Available
1

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HFA04SD60SPBF Summary of contents

Page 1

... 125 ° rated 125 ° 0 rated 200 V R Measured lead to lead 5 mm from package body For technical questions, contact: diodes-tech@vishay.com HFA04SD60SPbF Vishay High Power Products RRM rr VALUES UNITS 600 150 °C MIN. TYP. MAX. 600 - - - 1.5 1.8 - 1.8 2.2 - 1.4 1 ...

Page 2

... HFA04SD60SPbF Vishay High Power Products DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q rr Rate of fall of recovery current dI (rec)M THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and Stg storage temperature range Soldering temperature ...

Page 3

... V - Reverse Voltage (V) R Fig Typical Junction Capacitance vs. Reverse Voltage 0.01 0.0001 0.001 t - Rectangular Pulse Duration (s) 1 thJC For technical questions, contact: diodes-tech@vishay.com HFA04SD60SPbF Vishay High Power Products 1000 T = 150 °C J 100 T = 125 ° °C J 0.1 0.01 0.001 ...

Page 4

... HFA04SD60SPbF Vishay High Power Products 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Reverse Recovery Time vs 200 125 ° ° 100 dI /dt (A/µs) F Fig Typical Recovery Current vs. dI www.vishay.com 4 HEXFRED Ultrafast Soft Recovery Diode 1000 /dt F 1000 /dt F For technical questions, contact: diodes-tech@vishay.com ® ...

Page 5

... F ( area under curve defined and I RRM (5) dI (rec)M current during t to point where a line passing and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions For technical questions, contact: diodes-tech@vishay.com HFA04SD60SPbF Vishay High Power Products ( 0.5 I RRM (5) dI /dt (rec)M RRM ...

Page 6

... HFA04SD60SPbF Vishay High Power Products ORDERING INFORMATION TABLE Device code Dimensions Part marking information Packaging information www.vishay.com 6 HEXFRED Ultrafast Soft Recovery Diode HFA ® - HEXFRED family - Electron irradiated - Current rating ( D-PAK - Voltage rating (60 = 600 V) - Suffix - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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